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Display device and method of manufacturing the same

A technology for a display device and a manufacturing method, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., capable of solving problems such as increased terminal area, achieving high productivity and excellent display quality

Inactive Publication Date: 2010-01-13
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, there is a problem that the area of ​​the terminal portion increases

Method used

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  • Display device and method of manufacturing the same
  • Display device and method of manufacturing the same
  • Display device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] First, use figure 1 An active matrix display device to which the TFT substrate of the present invention is applied will be described. figure 1 It is a front view showing the structure of a TFT substrate used in a display device. Although a liquid crystal display device is described as an example of the display device of the present invention, this is only exemplary, and a flat display device (flat panel display) such as an organic EL display device or the like may be used.

[0028] The liquid crystal display device of the present invention has a TFT substrate 110 . The TFT substrate 110 is, for example, a TFT array substrate. In the TFT substrate 110, a display region 111 and a frame region 112 surrounding the display region 111 are provided. In the display region 111, a plurality of gate wirings (scanning signal lines) 182 and a plurality of source wirings (display signal lines) 153 that supply signals to TFTs 120 described later are formed. A plurality of gate w...

Embodiment 2

[0057] refer to image 3 The TFT substrate of Example 2 of the present invention will be described. image 3 is a sectional view showing the TFT substrate of this embodiment. In this embodiment, the only difference from Embodiment 1 is the structure of the pixel electrode layer 12, so detailed description is omitted.

[0058] image 3 It is a structure in which a pixel electrode is formed by two or more conductive films. The pixel electrode layer 12 has a transparent conductive film such as an ITO film, and a metal such as Cr, Mo, Al, Ta, Ti, or a metal film mainly composed of these metals. That is, in this embodiment, the pixel electrode layer 12 has a stacked layer structure having a lower conductive film 12a and an upper conductive layer 12b. Here, the upper conductive layer 12b is formed of a metal or an alloy mainly composed of a metal, and the lower conductive layer 12a is formed of a transparent conductive film. Thereby, similarly to the first embodiment, productiv...

Embodiment 3

[0062] refer to Figure 4 The TFT substrate of Example 3 of the present invention will be described. Figure 4 is a sectional view showing the TFT substrate of this embodiment. In this embodiment, the difference from Embodiment 1 is that the barrier metal 20 is formed in the contact hole 11 when a transparent conductive film such as TIO is used for the pixel electrode. Therefore, the description of the same contents as in the first embodiment will be omitted. In addition, the barrier metal 20 has an effect of reducing the contact resistance between the ITO and the semiconductor thin film in the third embodiment as well as the metal in the second embodiment, and the description thereof will be omitted. Here, the barrier metal 20 is buried, for example, in the contact hole 11 . Therefore, the pixel electrode layer 12 and the source-drain region 7 of the polysilicon film 4 are connected through the barrier metal 20 . In addition, the pixel electrode layer 12 and the first gui...

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Abstract

A display device includes a substrate, a gate insulating film provided over the substrate and disposed between a semiconductor layer and a first conductive layer including a capacitor electrode and a gate electrode, an interlayer insulating film formed over the semiconductor layer, the first conductive layer and the gate insulating film, a second conductive layer having a signal line formed over the interlayer insulating film, a protective film formed over the interlayer insulating film and the second conductive layer and a pixel electrode layer formed over the protective film. The semiconductor layer and the second conductive layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film to reach the second conductive layer and also penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer.

Description

technical field [0001] The present invention relates to a display device and a manufacturing method thereof. Background technique [0002] There are active matrix liquid crystal display devices using thin film transistors (Thin Filmed Transistor: TFT) as pixel switching elements, and display devices such as organic EL (Electroluminescence: electroluminescence). Among these display devices, a polysilicon thin film transistor in which polysilicon (silicon) is used as a channel active layer of a TFT has high mobility. In addition, when used as a pixel switching element, high definition can be achieved, and it can also be applied to a peripheral circuit portion for driving a pixel switching element. [0003] Conventionally, a polysilicon film used as an active layer of a TFT and a conductive film used as a gate electrode and a capacitor electrode are electrically connected through a source drain metal (source drain metal) located on the top thereof and used as a signal line (fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L23/522H01L21/82H01L21/768G02F1/1362
Inventor 西浦笃德竹口彻今村卓司
Owner MITSUBISHI ELECTRIC CORP