Resonator structure and method of producing it

一种谐振器、反射器的技术，应用在电气元件、阻抗网络等方向，能够解决损失等问题

Inactive Publication Date: 2010-01-20
QORVO US INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One effect of this is that energy is lost through unattenuated propagation of the F1, E1 and TS1 modes away from the resonator

Method used

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  • Resonator structure and method of producing it
  • Resonator structure and method of producing it
  • Resonator structure and method of producing it

Examples

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Embodiment Construction

[0086] Best Mode for Carrying Out the Invention

[0087] In what follows, some examples of bulk acoustic wave (BAW) resonators 100, 100' are described by using the planarization proposal according to the present invention; in particular, in Figure 8 Eight different embodiments of the invention are shown in Figure 15C, produced as proposed by the method according to the invention:

[0088] The substrate 10 may be, for example, silicon (Si), glass, gallium arsenide (GaAs), or ceramics.

[0089] On the substrate 10 is coated or deposited an acoustic reflector 20 consisting of fE / 4 layer pairs with high and low acoustic impedance. The layer can be silicon dioxide / tantalum pentoxide (SiO 2 / Ta 2 o 5 ), silicon dioxide / tungsten (SiO 2 / W), silicon dioxide / aluminum nitride (SiO 2 / AlN), silicon dioxide / hafnium dioxide (SiO 2 / HfO 2 ), silicon dioxide / molybdenum (SiO 2 / Mo), silicon dioxide / platinum (SiO 2 / Pt). Instead of silicon dioxide (SiO 2 ), low-density materials s...

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Abstract

In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and / or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and / or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.

Description

technical field [0001] The present invention generally relates to piezoelectric resonators and filters including piezoelectric resonators. [0002] In particular, the present invention relates to a resonator structure, especially a bulk acoustic wave (BAW) resonator, such as a thin film BAW resonator (FBAR) or a solidly mounted BAW resonator (SBAR), comprising at least one substrate Coating (apply) or at least one reflector layer deposited on the substrate; Coating or depositing at least one bottom electrode layer on the reflector layer, especially the bottom electrode; Coating or depositing on the bottom electrode layer at least one piezoelectric layer; at least one top electrode layer, in particular a top electrode, which is coated or deposited on the bottom electrode layer and / or the piezoelectric layer such that the piezoelectric layer is between the bottom electrode layer and the top electrode layer (see for example Prior art document WO 99 / 59244A2 or prior art document ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H01L41/22H01L41/29H03H3/04H03H9/17H03H9/56
CPCH03H3/04H03H2003/0428H03H9/564H03H9/175Y10T29/42H03H9/17H03H9/56
Inventor H·P·勒布尔R·F·米尔索姆C·梅茨马赫
Owner QORVO US INC
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