Coarse sapphire bushing LED and its making method

A sapphire substrate and light-emitting diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low light extraction efficiency and limited luminous efficiency

Inactive Publication Date: 2007-08-01
HANGZHOU SILAN AZURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the light extraction efficiency of GaN-based blue and green LEDs based ...

Method used

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  • Coarse sapphire bushing LED and its making method
  • Coarse sapphire bushing LED and its making method
  • Coarse sapphire bushing LED and its making method

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Embodiment Construction

[0022] The embodiment of the present invention will be specifically described below with reference to FIG. 1 to FIG. 7 .

[0023] Fig. 1 shows a longitudinal cross-sectional view of a roughened sapphire substrate of the present invention. The structure and manufacturing method are described in detail below.

[0024] The roughened pattern of the sapphire substrate 1 is formed by wet etching the substrate covered with a silicon dioxide mask. First deposit a layer of silicon dioxide film on the sapphire substrate 1 (the thickness needs to be greater than 1000 angstroms); then, the pattern window to be made will be made on the silicon dioxide mask by photolithography and etching methods; The substrate 1 with the silicon dioxide mask is etched in a mixture of concentrated phosphoric acid and concentrated sulfuric acid at a temperature above 250 degrees Celsius. By changing the pattern of the silicon dioxide mask and the etching time, the wet etching process can produce a roughene...

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Abstract

The invention discloses a production method of sapphire underlay granulated LBD that comprises providing a upside-down charging jointing plate and a sapphire underlay which includes a frontispiece and rear, and the first granulation surface which is corrupted to the frontispiece of the sapphire underlay by damp; the III-group nitride semiconductor multi film grows on the granulated underlay to form the LED chip, GaN crystal layer, GaN 2-D flat layer, n type GaN layer, lightening layer and p type GaN layer grows form the frontispiece of the underlay sequentially; the p type GaN layer of the LED chip is corroded partly to n type GaN layer; the p,n electrode are deposited to the LED chip; several press welding metal protruding points are deposited to the p, n electrode; step 6, the second granulation surface is formed on the back of the underlay; the LED chip is welded with upside-down charging jointing plate via upside-down metal protruding points. The sapphire underlay rear of invention is produced by damp. The craft is easy, the efficient is high. It can improve the efficiency remarkably.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a flip-chip structure light-emitting diode that utilizes a roughened sapphire substrate to improve light extraction efficiency, and mainly relates to the design and manufacture of regular roughened patterns on both sides of an LED sapphire substrate process. Background technique [0002] The luminous efficiency of a light-emitting diode (LED) is mainly determined by two factors: one is the electro-optical conversion efficiency of the LED light-emitting layer, which is generally characterized by the internal quantum efficiency of the device; the other is the efficiency of photons escaping from the light-emitting layer into the air, which is generally represented by Light extraction efficiency characterization. The internal quantum efficiency of an LED is determined by the structure of the device and the crystal quality of the semiconductor material. At present, the internal quantum eff...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/22
Inventor 刘榕刘伟江忠永田洪涛兰叶张建宝傅文越
Owner HANGZHOU SILAN AZURE
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