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Capacitive micromachined ultrasound transducer and methods of making the same

An ultrasonic transducer and micro-mechanical technology, applied in electret electrostatic transducers, micro sensors, ultrasonic/acoustic/infrasonic diagnosis, etc., can solve the unpredictability of diaphragm design, low device yield, and reduce device finished products Rate and other issues

Inactive Publication Date: 2007-08-15
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there is a mismatch in the coefficients of thermal expansion (CTE) of the various layers of the cMUT cell, such high temperature processing will tend to cause substrate distortion and film peeling, reducing device yield
In addition to low device yield, the thermal stress generated at the interface of each layer will change the boundary conditions of the diaphragm, making the diaphragm design (such as resonant frequency and collapsed voltage) unpredictable
Some methods such as high-temperature annealing must be used to mitigate the above-mentioned high-temperature induced effects, but these processes require additional steps

Method used

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  • Capacitive micromachined ultrasound transducer and methods of making the same
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  • Capacitive micromachined ultrasound transducer and methods of making the same

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Embodiment Construction

[0021] In many fields, such as medical imaging and non-destructive evaluation, it may be desirable to employ ultrasound transducers to enable the generation of high quality diagnostic images. High quality diagnostic images can be obtained by increasing the sensitivity and performance of a capacitive micromachined ultrasound transducer (cMUT) as a transmitter and receiver by reducing parasitic capacitance and reducing leakage current during operation.

[0022] Turning now to FIG. 1 , there is shown a schematic flowchart of the steps involved in a method of fabricating a cMUT cell. Those skilled in the art will appreciate that these figures are for illustrative purposes only and are not drawn to scale. In the illustrated embodiment, the method begins by providing a carrier substrate 10 . As will be described in detail below, in certain embodiments, substrate 10 may include vias (not shown) that provide electrical communication between two sides of substrate 10 . The carrier su...

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Abstract

A method of making a capacitive micromachined ultrasound transducer cell is provided. The method includes providing a carrier substrate, where the carrier substrate comprises glass. The step of providing the glass substrate may include forming vias in the glass substrate. Further, the method includes providing a membrane such that at least one of the carrier substrate, or the membrane comprises support posts, where the support posts are configured to define a cavity depth. The method further includes bonding the membrane to the carrier substrate by using the support posts, where the carrier substrate, the membrane and the support posts define an acoustic cavity.

Description

technical field [0001] The present invention relates generally to the field of diagnostic imaging and, more particularly, to capacitive micromachined ultrasound transducers (cMUTs) and methods for their manufacture. Background technique [0002] A transducer is a device that converts an input signal of one form into an output signal of another form. Commonly used transducers include light sensors, thermal sensors, and acoustic sensors. An example of an acoustic sensor is an ultrasound transducer, which can be used in medical imaging, non-destructive assessment, and other applications. [0003] Currently, one form of ultrasound transducer is the capacitive micromachined ultrasound transducer (cMUT). A CMUT cell generally includes a substrate, a bottom electrode coupled to the substrate, a diaphragm suspended above the substrate by pillars, and a metallization layer that functions as the top electrode. The bottom electrode, diaphragm and top electrode define the vertical ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/01H04R31/00A61B8/00
CPCA61B2562/028Y10T29/49005B06B1/0292
Inventor 田维诚L·S·史密斯C·-Y·魏R·G·沃德尼基R·A·费希尔D·M·米尔斯S·C·楚H·-J·关
Owner GENERAL ELECTRIC CO
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