Thin-film transistor and thin-film transistor array base plate

Abstract

The invention is concerned with the thin film transistor, includes: the grid, the grid insolating layer, the path layer, the helix source electrode and the helix drain electrode. It is: the grid insolating layer covers the grid; the path layer sets on the grid insolating layer that is on top of the grid; the helix source electrode sets on the path layer that is on the top of the grid; the helix drain electrode sets on the path layer that is on the top of the grid; the helix source electrode and the helix drain electrode is set with the revolving state. The invention can improve the W / L ratio of the path, and reduce the parasitic capacitance Cgd of the source electrode and the drain electrode.

Description

technical field [0001] The present invention relates to a thin film transistor, and in particular to a device capable of improving the channel W / L ratio and reducing the gate-drain parasitic capacitance C gd , and further effectively reduce the feedthrough voltage (feedthrough voltage, ΔVp) of the thin film transistor. Background technique [0002] The display has become an important human-machine communication interface. Users can read information through the display and then control the operation of the device. Among them, the liquid crystal display is the focus of development. Generally speaking, a liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter substrate, and a liquid crystal layer between the two substrates. Among them, the thin film transistor (Thin Film Transistor, TFT) is mainly used to control the data writing of the liquid crystal display, which includes gate (gate), channel layer (channel) and source / drain (sour...

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Problems solved by technology

[0007] Based on the above, when the thin film transistor 116 is turned off, the liquid crystal capacitor C LC The voltage applied on the TFT still maintains a certain value, but since there is an overlapping area between the gate 116a and the drain 116d of the thin film transistor 116, there will be a gate-drain gap between the gate 116a and the drain 116d. Parasitic capacitance (parasitic capacitance) C gd , and due to the gate-drain parasitic capacitance C gd The presence of the liquid crystal capacitance C LC The voltage held on will change with the signal on the data wiring 114, thus making the liquid crystal capacitance C LC The maintained voltage deviates from the previously set value

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