CMOS image sensor pixels

Abstract

The invention discloses a CMOS image sensor pels, thereinto, said pixel array at least includes a layer of metal, left-hand metal shift right, right-hand metal shift left, offset of said left-hand metal and right-hand metal are equal, or the offset is within 0. 2 micron. The invention can make metal layer not keep out incidence light, but also reduce the workload and difficulty of designing territory.

Description

technical field [0001] The present invention relates to a CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel. Background technique [0002] Compared with CCD (Charge Coupled Device), CMOS image sensor has the advantages of high integration, low power consumption, and low cost, and has been more and more widely used. With the advancement of technology and market demand, the resolution of CMOS image sensors is getting higher and higher, while the pixel size is getting smaller and smaller, reaching 2.2 microns or even smaller. Such a small pixel can cause a series of problems, one of which is that the metal layer will block the incident light. Not only will the pixel sensitivity be reduced, but the metal will reflect and scatter the incident light, causing noise. In order to solve this problem, it is proposed that the metal layer of each pixel is offset relative to the photosensitive area, and the offset amount of the metal layer of each pixel is different, so a...

AI Technical Summary

Problems solved by technology

Not only increases the workload of layout design, but in some cases, it is impossible to realize, especially when there are many metal layers

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