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Optimized wire bonding of an integrated modulator and laser diode on a mount

A technology for optical semiconductor components and mounting substrates, which is applied in semiconductor devices, semiconductor lasers, semiconductor/solid-state device components, etc., and can solve problems such as difficulty in obtaining output waveform quality

Active Publication Date: 2007-11-14
NIPPON LUMENTUM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the small inductance of the additional bonding wire in this circuit form produces unwanted gain (pulse peaking) in the small-signal pass characteristic (S21) of the optical modulator
As a result, even if the bonding wire length to the ground electrode is shortened within the mountable range to improve the characteristics, it is difficult to obtain good output waveform quality

Method used

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  • Optimized wire bonding of an integrated modulator and laser diode on a mount
  • Optimized wire bonding of an integrated modulator and laser diode on a mount
  • Optimized wire bonding of an integrated modulator and laser diode on a mount

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A first embodiment of the present invention will be described with reference to FIGS. 1 to 3 and FIGS. 9 to 13 .

[0042] 1 is a structural diagram showing the main parts of the optical transmission module in this embodiment, FIG. 2 is a main circuit diagram showing the optical transmission module, FIG. Figure 10 is a diagram showing the optical output waveform of the optical transmission module, and Figures 11 to 13 respectively show the keys connected to the optical modulator element Graphs of excess gain, 3dB band, and input reflection characteristic S11 when the inductance of the bond wire changes.

[0043] First, the configuration of the optical transmission module will be described using FIG. 1 . The optical transmission module uses a CAN type (a structure in which terminals are drawn from one side of a cylinder) package frame, 1 is the metal rod, and 2 is a metal base for mounting the main part. Cylindrical lead pins 3 and 4 are provided through cylindrical thr...

Embodiment 2

[0081] A second embodiment of the present invention will be described with reference to FIGS. 4 to 6 and FIGS. 19 to 22.

[0082] Fig. 4 is a structural diagram showing the main parts of the optical transmission module in this embodiment, Fig. 5 is a main circuit diagram showing the optical transmission module, Fig. 6 is a detailed view of the carrier substrate part, and Fig. 19 shows the input reflection of the present embodiment As a graph of the characteristic S11, FIG. 20 is a graph showing the small-signal pass characteristic S21.

[0083] As shown in FIG. 4 and FIG. 6 , the main difference from Embodiment 1 is that the arrangement of the anode and cathode of the surface electrodes of the semiconductor chip 122 is reversed left and right and the input transmission line 127 is extended to the light modulator element 121. lower part. Separate rear electrodes are provided on the rear of the semiconductor chip 122 at the respective lower parts of the light modulator element ...

Embodiment 3

[0091] A third embodiment of the present invention will be described with reference to FIGS. 7 and 8 .

[0092] FIG. 7 is a configuration diagram showing a main part of the optical transmission module in this embodiment, and FIG. 8 is a main circuit diagram showing the optical transmission module. The main difference from the second embodiment described above is that the optical modulator element 21 is driven by a differential electrical modulation signal.

[0093] First, the configuration of the optical transmission module will be described using FIG. 7 . The optical transmission module uses a CAN-type package frame, 1 is its metal rod, and 2 is a metal pedestal for mounting the main part. Columnar lead pins 3 , 4 are provided through cylindrical through holes 209 , 210 in the metal rod 1 , and are fixed by a sealing glass 5 . The relay substrates 205 and 207 and the carrier substrate 223 are mounted on the metal base 2 . The transmission line 206 is provided on the relay ...

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Abstract

An optical transmission module of the invention uses a semiconductor chip (22) forming an optical modulator integrated laser on a semi-insulating semiconductor board (23). An input transfer line (27) and an anode electrode of an optical modulator element (21) are connected by a first bonding wire (31). The anode electrode of the optical modulator element (21) and one of the ends of a terminal resistor element (24) are connected by a second bonding wire (32). A cathode electrode of the optical modulator element (21) and the other end of the terminal resistor element (24) are connected by a third bonding wire (33). The cathode electrode of the optical modulator element (21) and a ground electrode (25) are connected by a fourth bonding wire (34). A joint portion between the first bonding wire (31) and the input transfer line (27) is arranged on an opposite side to a joint portion between the fourth bonding wire (34) and the ground electrode (25) while interposing the semiconductor chip (22) between them.

Description

technical field [0001] The present invention relates to an optical transmission module for optical communication, and more particularly to an optical transmission module used in a transmission unit of an optical wireless transceiver having a high-speed transmission rate (for example, 10 Gbit / s). Background technique [0002] An optical transmission module using a semiconductor laser is one of the key components of a wireless transceiver for optical fiber transmission. With the spread of broadband networks in recent years, the speed of optical transmission modules is being sought, and optical transmission modules with a bit rate of 10 Gbit / s are widely used. As an optical transmission module suitable for the above-mentioned application, it is strongly required to realize good transmission waveform quality while being small and low-cost. [0003] Conventionally, Japanese Patent Laid-Open No. 2001-257412 (corresponding to U.S. Patent No. 6,823,145 ) and Japanese Patent Laid-Op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L25/16H01L23/488H01L23/66H05K1/18H04B10/155G02F1/015H01S5/022
CPCH01S5/0427H01S5/0208H01L2224/48137H01S5/02212H01L2224/48091H01S5/02276H01L24/49H01S5/0422H01S5/06226H01L2224/49111H01L2224/49175H01S5/0683H01S5/0265H01L2924/30107H01S5/02248H01L2924/3011H01L2224/49H01L2224/48227H01L2924/12042H01L2924/00014H01L2224/45014H01L24/48H01S5/02325H01S5/02345H01L2924/00H01L2224/45099H01L2224/45015H01L2924/207H01L2924/206
Inventor 加贺谷修
Owner NIPPON LUMENTUM CO LTD
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