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Design method for radio frequency single electronic transistor displacement transducer

A single-electron transistor, displacement sensor technology, applied in the field of quantum information, can solve problems such as affecting the speed of measurement, limiting the operating frequency of single-electron transistors, and large tunnel junction resistance.

Active Publication Date: 2007-12-19
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0009] However, the tunnel junction resistance of conventional single-electron transistors is very large, and there are inevitable scattered capacitances at the same time, so its RC constant is very large, which limits the operating frequency of single-electron transistors, generally lower than 10kHz, which affects the speed of measurement
In addition, conventional single-electron transistors are also affected by 1 / f noise due to their operation at lower frequencies

Method used

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  • Design method for radio frequency single electronic transistor displacement transducer
  • Design method for radio frequency single electronic transistor displacement transducer
  • Design method for radio frequency single electronic transistor displacement transducer

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Embodiment Construction

[0028] In order to further illustrate the content of the present invention, the specific method of the present invention is further described in detail below in conjunction with the accompanying drawings, wherein:

[0029] Figure 1-1 is an equivalent circuit diagram of a single-electron transistor, where R J1 , R J2 、C J1 、C J2 are the equivalent resistance and capacitance of the two tunnel junctions, C g is the equivalent gate capacitance.

[0030] Figure 1-2 is a structural schematic diagram of a double-terminal fixed beam coupled with a radio frequency single-electron transistor, in which the double-terminal fixed beam vibrates under the action of a magnetic field after adding a voltage bias, which causes C beam The change of , is finally measured on the source-drain current of the single-electron transistor. where V g is the gate bias voltage, V ds is the bias voltage between source and drain, V beam is the bias voltage of the double-terminal fixed beam, C g is th...

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Abstract

A method for preparing displacement transducer of radio-frequency single electronic transistor type includes preparing beams being fixed at two ends and single electronic transistor on SOI substrate, utilizing nanoscale beams being fixed at two ends as sensitive elements and utilizing radio-frequency single electronic transistor as sensing element to form fast supersensitive displacement transducer.

Description

technical field [0001] The invention relates to the technical field of quantum information, in particular to a design method of a radio frequency single-electron transistor displacement sensor. More specifically, a design method for fast ultrasensitive displacement sensors based on RF single-electron transistors on SOI substrates. Background technique [0002] Fast and ultra-sensitive displacement and micro force sensors have broad application prospects at present. It can be used in the measurement of quantum superimposed states, quantum coherent states, and single-spin magnetic resonance of magnetic resonance force microscopy (MRFM). In addition, it can also be applied to In the data readout of nuclear magnetic resonance quantum computer and so on. The nanoscale displacement sensor involved in the present invention reaches the standard quantum limit in the radio frequency range . Take a micrometer-scale beam as an example, assuming a resonant frequency of 100MHz and a q...

Claims

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Application Information

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IPC IPC(8): G01B7/02G01N13/10G01Q80/00
Inventor 王琴王丛舜龙世兵刘明叶甜春
Owner SEMICON MFG INT (SHANGHAI) CORP
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