Method for producing directionally solidified silicon ingots
A technology for directional solidification and polycrystalline silicon ingots, which can be used in self-solidification methods, chemical instruments and methods, self-area melting methods, etc., and can solve problems such as reducing production costs.
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Embodiment 1
[0012] Embodiment 1 (prior art)
[0013] Directional solidified silicon ingots were produced from a silicon feedstock initially containing 0.8 ppma boron and 3.6 ppma phosphorous. The transition from p-type material to n-type material in a silicon ingot occurs at approximately 60% of the height of the solidified ingot. The resistivity of the as-prepared silicon ingot is shown in Figure 1, from which it can be seen that the transition from p-type material to n-type material occurs at about 60% of the ingot height.
Embodiment 2
[0014] Embodiment 2 (the present invention)
[0015] The same silicon raw material in Example 1 was used to prepare directionally solidified silicon ingots. Boron is continuously added to the remaining molten silicon when approximately 50% of the ingot has solidified. As can be seen in Figure 2, the transition from p-type material to n-type material occurs at greater than 90% of the height of the solidified ingot. The amount of boron added to the silicon melt is also shown in FIG. 2 .
[0016] By comparing the results of Example 1 and Example 2, it can be seen that the transition from p-type material to n-type material moves from about 60% of the ingot height to greater than 90% of the silicon crystal height.
[0017] Thus, with the present invention, it is possible to significantly increase the fraction of directionally solidified ingots (solidified as p-type material or n-type material).
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Abstract
Description
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Application Information
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