Semiconductor memory device

Abstract

Disclosed is a word line driving circuit which includes a first MOS transistor and a second MOS transistor having mutually different conductivity types and a third MOS transistor of a conductivity type which is the same as that of the first MOS transistor. Gates of the first and second MOS transistors are connected in common for receiving an input signal. Sources of the first and second MOS transistors are connected to a first power supply and a second power supply, respectively. The third MOS transistor is connected between a drain of the first MOS transistor and a drain of the second MOS transistor. A connection node between the drain of the second MOS transistor and a drain of the third MOS transistor is connected to a word line. When the input signal is set to a high level and when the second transistor is turned on, a potential lower than a high level of the input signal is supplied to a gate of the third MOS transistor. A signal with a high level thereof being lower than a high level of the input signal, or a fixed GND potential is supplied to the gate of the third MOS transistor.

Description

technical field [0001] The invention relates to a semiconductor storage device, in particular to a word line drive circuit. Background technique [0002] In recent years, the battery storage time of mobile phone terminals has been required to be longer, and the dynamic memory (which needs to be refreshed to maintain cell data) mounted on mobile phone terminals and the like has also been required to reduce power consumption. In addition, as a dynamic memory mounted on a mobile phone terminal, etc., there are DRAM (Dynamic Random Access Memory) and analog SRAM (Static Random Access Memory). The analog SRAM has a memory core composed of DRAM cells and conforms to the SRAM interface specification. [0003] In particular, it is important to reduce the power consumption (standby current) of the dynamic memory when the dynamic memory is in standby by prolonging the battery retention time in the standby state which occupies most of the use state of the mobile phone terminal. [000...

AI Technical Summary

Problems solved by technology

[0022] In the above-mentioned Patent Documents 1 and 2, the connection is switched between different potentials at the time of activation and at the time of standby, so that current consumption occurs due to charging / discharging on the connection node at the time of switching the connection

[0023] Therefore, when active-standby switching occurs frequently, the GIDL during standby is reduced, but the charging / discharging current of the connection node is affected, and the standby current increases instead.

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