Substrate processing with rapid temperature gradient control

Abstract

A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Description

Technical field [0001] Embodiments of the present invention relate to substrate processing techniques that utilize rapid temperature gradient control over the entire substrate. Background technique [0002] In the process of processing substrates such as semiconductors and displays, electrostatic chucks are used to fix the substrate in a chamber to process the layers on the substrate. A commonly used electrostatic chuck includes electrodes covered with ceramic. When the electrode is charged, electrostatic charges are accumulated on the electrode and the substrate, and the resulting electrostatic force fixes the substrate on the chuck. Generally, the temperature of the substrate is controlled by maintaining helium gas on the back of the substrate to increase the heat transfer rate in the entire microscopic gap at the interface between the back of the substrate and the surface of the card. The electrostatic chuck may be supported by a base that has channels for liquid to flow there...

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