Method for producing metal/semiconductor contacts through a dielectric

Abstract

The invention relates to a method for producing contacts (6.1 to 6.n) between at least one metallic layer (5) and at least one semiconductor substrate (1) through at least one dielectric layer (4) in a semiconductor device (100). Said semiconductor device (100) comprises the dielectric layer (4) on at least one face (2), the so-called base of the semiconductor substrate (1). The metallic layer (5) is stacked on the dielectric layer (4). Heated ends of a plurality of projecting elements (13.1 to 13. n) mounted on a support (12) are simultaneously brought into contact with the metallic layer (5), thus creating regions of molten metal (14.1 to 14. n) under the heated ends of the projecting elements (13.1 to 13. n). The molten metal passes through the dielectric (4) and merges with the semiconductor of the substrate (1) in the molten metal regions (14.1 to 14. n), thus creating the contacts (6.1 to 6.n).

Description

technical field [0001] The present invention relates to a method of forming metal / semiconductor contacts through a dielectric, and is particularly suitable for forming semiconductor devices. This method can be used, for example, to form metal / semiconductor contacts on the rear side of a homojunction solar cell. Background technique [0002] The manufacture of industrial-grade solar cells pursues two goals: increasing the efficiency of solar cells and increasing the productivity of manufacturing these solar cells. Most solar cells manufactured are based on crystalline silicon. Solar cells can be divided into two categories: heterojunction solar cells and homojunction solar cells. [0003] The traditional method of manufacturing crystalline silicon homojunction solar cells is as follows: [0004] A silicon substrate doped with N or P is placed in a diffusion furnace so that on one side of the substrate a region doped with P+ is formed when the silicon is doped with N, or a ...

AI Technical Summary

Problems solved by technology

The main disadvantage of this method is that it cannot have good productivity

In fact, the laser has to form 100 to 500+ melting points on each cell, which requires a long formation time

In addition, the laser can damage the metal surface (causing the backside of the cell to be too thick), which is the reason for the damage that occurs during the interconnection between several cells

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