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Self-cooling gas delivery apparatus under high vacuum for high density plasma applications

一种气体分配器、气体的技术，应用在电气元件、气态化学镀覆、半导体/固态器件制造等方向，能够解决薄膜不均匀、微粒与其它等问题

Inactive Publication Date: 2008-02-27
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These high temperatures cause the process gas to decompose prematurely in the gas tube instead of close to the substrate, allowing the subsequent formation of by-products to react bonded to the film
These undesirable reactions can lead to film non-uniformity, particles and other problems during the deposition process

Method used

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  • Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
  • Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
  • Self-cooling gas delivery apparatus under high vacuum for high density plasma applications

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Embodiment Construction

[0066] The present invention generally relates to semiconductor manufacturing equipment. More specifically, the present invention relates to temperature control of semiconductor manufacturing equipment. By way of example, the invention has been applied to self-cooling gas delivery equipment in conjunction with high density plasma processing equipment. The method and apparatus of the present invention are applicable to other applications as well as to the aforementioned self-cooling gas delivery pipes and the like.

[0067] Figure 1 is a schematic illustration of a conventional gas delivery documentation board. As shown in FIG. 1, a conventional gas delivery baffle includes a gas inlet 112 located on the upper surface of the baffle, and a gas outlet (not shown) located on the lower surface of the baffle. The baffle is screwed into a gas delivery device using threads 104 . The gas delivery device (not shown) is in fluid communication with a gas source. The baffle has a shank...

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Abstract

A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends radially outward away from the stem section and a lower face disposed on the opposite side of the body from the gas deflecting surface, a lateral seat disposed between the spiral thread and the gas deflecting surface, and a gas passageway that extends from the gas inlet through the stem section and body to the gas outlet. In a specific embodiment, the lateral seat is adapted to hold a sealing member.

Description

technical field [0001] This invention relates to semiconductor manufacturing equipment. More specifically, the invention relates to temperature control of semiconductor devices. By way of example, the invention has been applied to self-cooling gas delivery equipment in conjunction with high density plasma processing equipment. The method and apparatus of the present invention are applicable to other applications as well as to the aforementioned self-cooling gas delivery pipes and the like. Background technique [0002] Chemical vapor deposition (CVD) is a gas reaction process used in the semiconductor industry to form thin films or layers of desired materials on substrates. Certain high-density plasma (HDP)-enhanced CVD processes use reactive chemical gases with physical ions formed by RF plasma by directing the positively charged plasma ions at a near-perpendicular ), or by directional biasing the substrate surface to form a preferred angle with the surface and adsorbing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/50C23C16/00C23C16/505H01L21/3065
CPCH01J37/3244C23C16/45563C23C16/507H01J37/32449
Inventor 梁奇伟路四清
Owner APPLIED MATERIALS INC
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