Insulation type large power triode manufacture method
A manufacturing method and high-power technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of reduced power dissipation, improved thermal resistance, and reduced reliability, so as to improve uniformity and improve Effect of thermal conductivity and reliability improvement
Inactive Publication Date: 2008-03-19
周柏泉
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Problems solved by technology
Since the connection between the heat sink and the electronic ceramics, and the connection between the electronic ceramics and the bottom plate in the manufacturing process of the triode adopts a brazing process, but the thermal resistance of this welding process is greatly increased due to the uneven contact area, and the actual consumption Dissipated power is reduced, and reliability is reduced, especially for some highly reliable instruments and harsh environments, such as: high temperature, high humidity, ultra-low temperature and military applications
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[0017] Example: The collector surface of the chip 1 is sintered on the heat sink 3 at a temperature of 400°C, and the assembly of the chip 1 and the heat sink 3 is sintered with the nickel-plated silicon dioxide electronic ceramic sheet 4 at a temperature of 350°C. Wherein the thickness of silicon dioxide is 200 microns, the thickness of one side of the nickel plating layer is 15 microns, then the assembly of chip 1, heat sink 3 and electronic ceramic chip 4 is sintered on the metal base plate 2, the sintering temperature is 350 ℃, and then Spot-weld the collector pin 6 of the triode on the heat sink 3, and connect the other two pins to the base and emitter of the chip with the lead wire 7 respectively, and finally package the component in the molding compound 5 to obtain an insulated high-power triode A .
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Abstract
The invention relates to a method of fabricating a semiconductor device, more particularly a method of fabricating an insulation-type high-power triode, which comprises the following steps: sintering the collector electrode surface of a chip with a heat sink, then sintering the heat sink in the resulting assembly with an electronic ceramic chip with metal coatings on double surfaces, sequentially sintering the electronic ceramic chip in the obtained assembly with a metal substrate, spot-welding pins on the heat sink (that is collector electrode), connecting two pins with the base electrode and the emitting electrode of the chip by using lead wires, and finally packaging the obtained triode. With the sintering process, the invention can efficiently increase the heat-conducting property of the triode device and improve the operational reliability of the triode device.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of an insulated high-power triode. Background technique [0002] A triode device (transistor or triode for short) is a special device with amplification capability. Due to the large heat generated by high-power triodes, heat dissipation technology is particularly important. Patent CN95225350.X provides a structure of a mounting surface insulation type power device, which is mainly provided with a thermally conductive insulating layer and a bottom plate in the existing structure, the thermally conductive insulating layer is located between the heat sink and the bottom plate, and the heat sink is brazed on the The thermally conductive insulating layer, while the thermally conductive insulating layer is brazed on the base plate. In the manufacturing process of the triode, the connection between the heat sink and the electronic ceramics, and...
Claims
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IPC IPC(8): H01L21/50
CPCH01L2224/48091H01L2224/48247H01L2924/00014
Inventor 周柏泉
Owner 周柏泉