Device for improving single wire state luminous specific gravity in electric field inducing luminous
An electric field induced, singlet state technology, applied in the field of organic electroluminescent devices, can solve the problems of no advantages
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[0015] A device for increasing the specific gravity of singlet luminescence in electric field induced luminescence, the structure of which is:
[0016] ITO / SiO2 2 / Au / OEL / Al
[0017] It is in ITO / SiO 2 / OEL / Al structure based on SiO 2 An Au electrode with semi-transmissive electrons is added between the p-type OEL layer and the p-type OEL layer;
[0018] to SiO 2 A DC electric field V is applied between the layer and AL 1 =3.5MV / cm, large electric field strength is beneficial to obtain high-energy superheated electrons, SiO 2 The thickness of the layer is 150 nm;
[0019] Apply a DC voltage V between the OEL layer and the ITO 2 =10V, to prevent the breakdown of the organic layer and control the field ionization of the excitons, the thickness of the OEL layer is 30nm.
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