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Device for improving single wire state luminous specific gravity in electric field inducing luminous

An electric field induced, singlet state technology, applied in the field of organic electroluminescent devices, can solve the problems of no advantages

Inactive Publication Date: 2008-04-09
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with photoluminescence, both sides can have cyclic excitation, so there is no advantage, and another way must be found

Method used

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  • Device for improving single wire state luminous specific gravity in electric field inducing luminous
  • Device for improving single wire state luminous specific gravity in electric field inducing luminous
  • Device for improving single wire state luminous specific gravity in electric field inducing luminous

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Embodiment Construction

[0015] A device for increasing the specific gravity of singlet luminescence in electric field induced luminescence, the structure of which is:

[0016] ITO / SiO2 2 / Au / OEL / Al

[0017] It is in ITO / SiO 2 / OEL / Al structure based on SiO 2 An Au electrode with semi-transmissive electrons is added between the p-type OEL layer and the p-type OEL layer;

[0018] to SiO 2 A DC electric field V is applied between the layer and AL 1 =3.5MV / cm, large electric field strength is beneficial to obtain high-energy superheated electrons, SiO 2 The thickness of the layer is 150 nm;

[0019] Apply a DC voltage V between the OEL layer and the ITO 2 =10V, to prevent the breakdown of the organic layer and control the field ionization of the excitons, the thickness of the OEL layer is 30nm.

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Abstract

The invention discloses a device which enhances the ratio of singlet luminescence in electric field-induced luminescence. Based on a configuration of ITO / SiO2 / Au / OEL / Al, a semi electron-transparent Au electrode is added between the layer of SiO2 and the layer of p-type OEL in the device; a DC electric field V1=3.5MV / cm is exerted between the layer of SiO2 and the layer of Al, the large electric field intensity facilitates to acquire high-energy hot electrons, and the thickness of the layer of SiO2 is 150 nm; a DC voltage V2=10V is exerted between the layer of OEL and the layer of ITO, and the thickness of the layer of OEL is 30 nm. The configuration of the invention is ITO / SiO2 / Au / OEL / Al. The device is able to generate a quantum efficiency of electric field-induced organic luminescence bigger than one fourth of photoluminescence thereof, enhancing the ratio of singlet luminescence in organic electroluminescence and the entire brightness.

Description

technical field [0001] The invention relates to an organic electroluminescent device. It is suitable for improving the brightness of organic luminescence induced by an electric field, and improving the brightness of a luminous screen used in an electronically controlled flat panel display, etc. Background technique [0002] Organic electroluminescence is usually the emission of excitons, which consists of singlet state emission and triplet state emission. Statistical results In the excited state, the ratio of singlet state and triplet state of the molecule in the excited state is 1:3. Generally, the singlet state emits light, and the triplet state does not emit light. If excited by light, the spin of the excited electron remains unchanged, so that the excitons it forms are singlet states, so that in photoluminescence, the quantum efficiency of singlet state luminescence can reach 1. However, in organic electroluminescence, the optical transition of the singlet state only a...

Claims

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Application Information

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IPC IPC(8): H01L51/50
Inventor 徐征赵谡玲张福俊徐叙瑢
Owner BEIJING JIAOTONG UNIV