Method for preparing high purity, compact Ti3SiC2 block material

A block material, high-purity technology, applied in the preparation of Ti, C ceramic blocks, Si field, can solve the problems of high preparation temperature, long reaction time, difficult to prepare large-size materials, etc., to achieve high production efficiency and maintenance Convenience, high-purity effect

Inactive Publication Date: 2010-09-15
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention is to solve the problem of preparing Ti at present 3 SiC 2 Bulk materials have the problems of high preparation temperature and long reaction time, especially the difficulty of preparing large-scale materials by existing methods, and the preparation of high-purity and dense Ti 3 SiC 2 bulk material method

Method used

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  • Method for preparing high purity, compact Ti3SiC2 block material

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Experimental program
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specific Embodiment approach 1

[0013] Specific embodiment one: this embodiment prepares Ti 3 SiC 2 The method for the bulk material is carried out as follows: 1. According to the molar ratio, 2.5 to 3.5 moles of titanium powder, 1-x to 1.5-x moles of silicon powder, x moles of silicon carbide powder and 2-x moles of carbon powder Mix, where 03 SiC 2 blocks.

[0014] In step 1 of this embodiment, absolute ethanol is added as a dispersant to mix the materials evenly, so that the liquid level of the absolute ethanol is submerged by 1-5 mm of the materials.

[0015] The purity of titanium powder, silicon powder, silicon carbide powder and carbon powder in Step 1 of this embodiment is above 98%.

[0016] The Ti produced in this embodiment 3 SiC 2 The block material has a diameter of 30-50mm and a height of 10-20mm.

specific Embodiment approach 2

[0017] Embodiment 2: The difference between this embodiment and Embodiment 1 is: 0.2

specific Embodiment approach 3

[0018] Embodiment 3: The difference between this embodiment and Embodiment 1 is that x=0.25 in Step 1. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

A method for preparing Ti3SiC2 bulk material relates to a preparation method of Ti, Si, C ceramic bulk. The invention solves problems of high reaction temperature, long reaction time, more particularly, large size material is difficult to be prepared by the existing method. The method for preparing Ti3SiC2 bulk material of the invention has the steps: 1. mixing; 2. pressurizing and firing; 3. pressurizing and cooling, thereby obtaining the Ti3SiC2 bulk material. The other method provided by the invention for preparing the Ti3SiC2 bulk material has the steps that: 1. mixing; 2. pressurizing; 3. firing, pressurizing and cooling, thereby obtaining the Ti3SiC2 bulk material. The invention has low technique cost, does not need to heat with high temperature for a long time and can prepare bulk material with diameter reaching 240mm.

Description

technical field [0001] The invention relates to a method for preparing Ti, Si and C ceramic blocks. Background technique [0002] Ti 3 SiC 2 It is a new type of ternary layered compound. It not only has many advantages of ceramics, such as high modulus (Young's modulus 343GPa), high strength, etc., but also has some properties of metals, such as low hardness, machinability, good electrical and thermal conductivity, and high damage tolerance. Ti 3 SiC 2 Has a very low density theoretical density of 4.52g / cm 2 And excellent oxidation resistance, so it can be used as a high temperature structural material. Ti 3 SiC 2 As a new structure / function integrated material, it has wide application space in the fields of aviation, aerospace, electronics industry and nuclear industry. Although Ti 3 SiC 2 It has many excellent comprehensive properties and broad application prospects, but Ti 3 SiC 2 The preparation of is extremely difficult, which limits its related basic rese...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/30
Inventor 赫晓东朱春城柏跃磊
Owner HARBIN INST OF TECH
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