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Metal conducting wire mosaic structure and method of manufacture

A technology of metal wires and inlaid structures, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of RC delay and large leakage current, and reduce RC delay and leakage current, Guaranteed accuracy and reduced effects of capacitive coupling

Active Publication Date: 2008-06-04
INNOCOM TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In order to overcome the capacitive coupling between metal wires in the prior art metal wire mosaic structure, the RC delay caused by capacitive coupling and the large leakage current, it is necessary to provide a method that effectively reduces the capacitive coupling between metal wires, and uses capacitive coupling RC delay and leakage current caused by the metal wire damascene structure

Method used

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  • Metal conducting wire mosaic structure and method of manufacture
  • Metal conducting wire mosaic structure and method of manufacture
  • Metal conducting wire mosaic structure and method of manufacture

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Embodiment Construction

[0025] Please refer to Figure 6 , which is a structural schematic diagram of a preferred embodiment of the metal wire damascene structure of the present invention. The metal wire mosaic structure 2 includes a substrate 20, a first dielectric layer 21 is disposed on the substrate 20, the first dielectric layer 21 has a plurality of grooves 27, and a plurality of metal wires are embedded in the plurality of grooves 27. twenty four. A cover layer 25 is disposed on the first dielectric layer 21 and the metal wire 24 , and the cover layer 25 is used to protect the metal wire 24 and block the diffusion of the metal wire 24 . A second dielectric layer 26 is disposed on the cover layer 25 , and the second dielectric layer 26 is used to insulate the plurality of metal wires 24 from other electronic devices.

[0026] Wherein, the first dielectric layer 21 includes a first sub-dielectric layer 211, a second sub-dielectric layer 212 and a third sub-dielectric layer 213 stacked, the fir...

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Abstract

The invention relates to a mosaic structure of metal wires, which includes a basement, a dielectric layer and a plurality of metal wires. The dielectric layer is arranged at the basement, which has a plurality of grooves. The metal wires are inlayed in the plurality of grooves. The dielectric layer includes at least two sub-dielectric layers which are positioned by layer-cake and an air gap is kept between at least a sub-dielectric layer and the metal wires. The mosaic structure of the metal wires can effectively reduce capacitance coupling among the metal wires as well as RC delay and leakage current caused by the capacitance coupling. The invention also provides a method for manufacturing the mosaic structure of the metal wires.

Description

technical field [0001] The invention relates to a metal wire inlaid structure and a manufacturing method thereof, in particular to a metal wire inlaid structure for reducing capacitive coupling between metal wires and a manufacturing method thereof. Background technique [0002] In the design of large-scale and ultra-large-scale integrated circuits, the metal wire wiring method mainly adopts the damascene process. The traditional damascene manufacturing process of metal wires is mainly to form a mosaic structure groove for wiring in the dielectric layer, inlay a metal material with better conductivity in the groove, and then remove the excess by chemical mechanical polishing. metal and dielectric layers to form damascene wires, and finally a capping layer is formed on the metal wires. [0003] Please refer to figure 1 , which is a schematic diagram of a metal wire inlaid structure in the prior art, the metal wire inlaid structure 1 includes a substrate 10; a dielectric lay...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L21/768
Inventor 颜硕廷
Owner INNOCOM TECH SHENZHEN
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