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Transverse exchange-coupled magnetic information storage medium material and preparation method thereof

A technology of exchange coupling and storage media, which is applied to the manufacture of magnetic materials, magnetic layers, and disc carriers of record carriers, and can solve the problems of increased flip field distribution of information storage units and reduced stability of information recording, etc.

Inactive Publication Date: 2010-04-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the deficiencies in the increase of the switching field distribution of the information storage unit and the decrease of the information recording stability caused by the interface diffusion and the deterioration of the recording layer in the longitudinal (interlayer) exchange-coupled composite magnetic information storage medium proposed at present, the present invention provides A new type of magnetic information storage medium material with lateral exchange coupling structure and its preparation method

Method used

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  • Transverse exchange-coupled magnetic information storage medium material and preparation method thereof
  • Transverse exchange-coupled magnetic information storage medium material and preparation method thereof
  • Transverse exchange-coupled magnetic information storage medium material and preparation method thereof

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Experimental program
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specific Embodiment approach 1

[0018] (1) According to the requirements of surface density, the area of ​​each magnetic information storage unit is determined to be 40nm×40nm, and the magnetic information storage material is FePt alloy with a thickness of 10nm;

[0019] (2) Prepare a FePt alloy thin film with a thickness of 10nm by DC magnetron sputtering process on the recording disc, wherein the sputtering target material is Fe50Pt50 (atomic ratio), the purity is 99.9%, and the sputtering process is background vacuum-7 mbar; argon sputtering pressure 5×10 -3 mbar with a power of 250W.

[0020] (3) Put the magnetic film-coated disk in the vacuum annealing furnace, and vacuumize to 1×10 -4 Below mbar, flush with hydrogen to a pressure of 2×10 -5 mbar, annealed at 580°C for 1 hour to make the magnetic film with L 10 A high anisotropy constant magnetic thin film 2 whose magnetic anisotropic easy axis of the phase structure is oriented along a direction perpendicular to the substrate.

[0021] (4) Place the...

specific Embodiment approach 2

[0022] Similar to Embodiment 1, only the ion beam implantation process is changed to the ion diffusion process.

specific Embodiment approach 3

[0023] Similar to Embodiment 1, only the FePt alloy material is changed to CoPt, SmCo or NdFeB.

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Abstract

The invention relates to a super-high density magnetic information memorizing technique, belonging to the electronic material technique field. A magnetic information memorizing unit of the invention is formed by a horizontal exchanging and coupling of high / low anisotropy constants magnetic films. When in preparation, the high anisotropy constants magnetic film is firstly prepared and then is partially modified through an ion implantation or ion diffusion process after anneal treatment to decrease the anisotropy and coercive forces of the modified part so as to form the low anisotropy constants magnetic film. Finally, the high / low anisotropy constants magnetic films are coupled along the horizontal direction to form the magnetic information memorizing medium material of the horizontal exchange coupling. The invention overcomes the defects of a vertical exchange coupling compound magnetic information memorizing medium that an enlarged distribution of the information memorizing unit switch field and a decrease of the information recording stability are caused by interface diffusion and deterioration of memorizing layer in a high temperature treatment process. The invention can further decrease the switch field of the information memorizing unit, therefore, the information recording can be more stable, so as to satisfy the requirement of the super-high density magnetic information memorizing.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, relates to a magnetic medium material applied to ultra-high density magnetic information storage, and in particular relates to solving the problem of writing information on a high anisotropy constant magnetic recording medium. Background technique [0002] With the continuous development of the information society, human beings have higher and higher requirements for information storage, and the pursuit of higher density information storage is the eternal goal of human beings. Magnetic information storage is a main means of information storage. In the process of its high density, the size of the recorded magnetic domain is required to be smaller and smaller. When the size is small to a certain extent, the thermal motion of the magnetic domain will be irregular, that is, it will show superparamagnetism, and thus lose the recorded information. The relaxation time of the magnetic order...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/16H01F10/14G11B5/706G11B5/84
Inventor 钟智勇刘爽张怀武荆玉兰唐晓莉苏桦贾利军
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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