Method for removing photoresist graphical in forming process of dual embedded structure

A dual damascene structure and photoresist technology, applied in the processing of photosensitive materials, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of complex process, increased dielectric constant, and easy damage, and simplify the removal process. , the effect that the dielectric constant does not change
CN101202244AActive Publication Date: 2008-06-18SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2008-06-18

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Abstract

The invention provides a removing method for a photo resist image in the forming process of a double inlaying structure; the forming process of the double inlaying structure comprises the following steps: a semiconductor substrate with a preformed semiconductor device is provided; a metal interconnecting line layer with a surface which is provided with a dielectric layer is formed on the substrate; connecting holes are etched in the dielectric layer; a sacrificial layer and a hard mask layer are deposited; a bottom anti-reflecting layer and a photo-resist layer are coated and patterned to form the photo resist image; oxy plasma incinerates and removes the bottom anti-reflecting layer and the photo-resist layer. The removing method of the invention can simplify the removing process and prevent the dielectric layer with a low dielectric constant from being damaged.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist patterns during the formation of a dual damascene structure. Background technique

[0002] Today's semiconductor device manufacturing technology is developing rapidly, semiconductor devices already have a deep submicron structure, and integrated circuits contain a huge number of semiconductor components. In such large-scale integrated circuits, high-performance, high-density connections between components are not only interconnected in a single interconnect layer, but also interconnected between multiple layers. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor elements. Especially the multi-layer interconnect structure formed by the dual-damasce...

Claims

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