2results about How to "Simple removal process" patented technology

This invention provides a method for removing fluoroaluminate polymers generated during an etching process, comprising: forming an aluminum layer, a dielectric layer, and a patterned photoresist layer on a substrate; etching the dielectric layer using the patterned photoresist layer as a mask until an aluminum layer is exposed but before further etching of the aluminum layer, forming a groove and forming a carbon polymer layer on the sidewalls of the groove; forming a sacrificial layer on the sidewalls of the groove; over-etching the bottom of the groove, forming a fluoroaluminate polymer layer on the sidewalls of the groove; removing the patterned photoresist layer; and removing the sacrificial layer, the fluoroaluminate polymer layer, and the carbon polymer layer. This invention performs two etching processes on the dielectric layer. The first etching is performed until an aluminum layer is exposed but before further etching of the aluminum layer, forming a sacrificial layer on the sidewalls of the groove. Then, the bottom of the groove is over-etched. The fluoroaluminate polymer layer generated during the etching of the aluminum layer is formed on the sidewalls of the sacrificial layer, thereby making the fluoroaluminate polymer layer easier to remove.

The invention provides a method for removing tetravalent tin on the surface of stannous niobate through a reduction method and application, and relates to the technical field of photocatalysis and photoelectrocatalysis. The method comprises the following steps: infiltrating a stannous niobate electrode material in an electrolyte solution, so that the surface of stannous niobate is in full contact with the electrolyte solution; bias voltage is applied to the stannous niobate electrode material, so that the tetravalent tin on the surface of the stannous niobate is subjected to reduction reaction to be removed, and the charge shielding layer formed on the surface of the stannous niobate by the tetravalent tin is removed. By adopting the technical scheme, the reduction dissolution of tetravalent tin on the surface of stannous niobate is effectively regulated and controlled by controlling the composition of the electrolyte solution and applying the bias voltage, so that the problem of relatively low photovoltage caused by Fermi level pinning due to the existence of the tetravalent tin is solved, the recombination of charges at tetravalent tin sites is also reduced, and the photoelectric conversion efficiency is improved. Therefore, the purpose of cleaning the surface and restoring the surface to the initial state is achieved.