An organic thin film transistor and its making method

An organic thin film and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of reduced component performance characteristics, poor adhesion, etc., to improve component performance, save costs, avoid The effect of component damage

Inactive Publication Date: 2008-07-02
CHUNGHWA PICTURE TUBES LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the adhesion between the material layers in this document is not good, all of which are hydrophobic, and it is also quite

Method used

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  • An organic thin film transistor and its making method
  • An organic thin film transistor and its making method
  • An organic thin film transistor and its making method

Examples

Experimental program
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Example Embodiment

[0030] Figure 1A to Figure 1D It is a schematic cross-sectional view of a process flow of a method for manufacturing an organic thin film transistor according to an embodiment of the present invention.

[0031] Please refer to Figure 1A , Provide a substrate 100. The substrate 100 is, for example, a glass substrate or a plastic substrate. Then, a gate 102 is formed on the substrate 100. The material of the gate 102 is, for example, chromium (Cr), aluminum (Al), aluminum neodymium (AlNd) or other suitable metals or metal alloys. The formation method of the gate 102 is, for example, chemical vapor deposition (CVD) or physical vapor deposition (PVD). Of course, the material of the gate 102 can also be, for example, gold nanoparticles, silver nanoparticles, palladium nanoparticles, copper nanoparticles, or other suitable metal nanoparticles. The forming method is, for example, printing or inkjet. (ink-jet).

[0032] Then, please continue to refer to Figure 1A , A gate insulating l...

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PUM

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Abstract

The invention discloses an organic membrane transistor, which comprises a substrate, a grid electrode, an grid electrode insulating layer, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer, wherein the grid electrode is arranged on the substrate; the grid electrode insulating layer is arranged on the grid electrode and the substrate; the adhesive layer is arranged on the grid electrode insulating layer and is provided with a hydrophobic surface above the corresponding grid electrode, as well as a first hydrophilic surface and a second hydrophilic surface on the two sides of the hydrophobic surface; a metal particle surface of the metal nano-particle layer is decorated with a hydrophilic group; the metal nano-particle layer is arranged on the first and second hydrophilic surfaces of the adhesive layer to be taken as a source electrode and a drain electrode respectively. In addition, the organic semiconductor layer is arranged on the hydrophobic surface of the adhesive layer as well as on the metal nano-particle layer.

Description

technical field [0001] The present invention relates to a thin film transistor and its manufacturing method, and in particular to an organic thin film transistor (OTFT) and its manufacturing method. Background technique [0002] The operation principle of the thin film transistor is similar to that of the traditional semiconductor MOS element, which is an element with three terminals (gate, drain, and source), and the function of the thin film transistor is used as a switching element of the pixel unit of the liquid crystal display. At present, the industry is actively developing an organic thin film transistor (OTFT), which has the advantages of low process temperature and low process cost compared with traditional thin film transistors, and combined with organic thin film transistor manufacturing technology on plastic substrates, it can be applied to active Drive displays, smart cards, or low-cost electronics. [0003] In US Patent Publication No. US 2005 / 0232342 "ORGANIC...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/40
Inventor 蔡依芸吴泉毅赖钦诠
Owner CHUNGHWA PICTURE TUBES LTD
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