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Method and apparatus for a semiconductor structure forming at least one via

A semiconductor and crystal technology, applied in the field of semiconductor structures and equipment for forming at least one through hole, can solve problems such as increasing the cost of production

Inactive Publication Date: 2008-07-30
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contacts on both sides of the device can increase the complexity of module manufacturing and thus increase its cost

Method used

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  • Method and apparatus for a semiconductor structure forming at least one via
  • Method and apparatus for a semiconductor structure forming at least one via
  • Method and apparatus for a semiconductor structure forming at least one via

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Embodiment Construction

[0066] As shown in FIG. 1 , an exemplary embodiment of a solar cell module 50 may include a plurality of semiconductor structures or photovoltaic devices 100 . While structure 100 is shown, other structures such as those described herein may also be utilized independently.

[0067] As shown in FIG. 2, an exemplary semiconductor structure 100 may include a semiconductor substrate 120, a first semiconductor layer 200, a second semiconductor layer 220, a third semiconductor layer 230, a fourth semiconductor 240, at least one electrical contact 270, a transparent conductive layer 304 and a plurality of metal patterns 310. In general, semiconductor structure 100 may include front side 104 and back side 106 and may include or form at least one via or plurality of vias 110 . Typically, the plurality of vias 110 penetrate through layers 304 and 200, substrate 120, and through layers 220 and 240, respectively. It is desirable for the semiconductor structure 100 to form a first via ho...

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Abstract

The invention relates to a semiconductor structure as a demonstrating embodiment, comprising a semiconductor substrate having a conductive type that has a front surface and a rear surface and at least one through hole crossing the semiconductor substrate, wherein the at least one through hole is filled by a conductive material; a semiconductor layer arranged on at least portion the front or rear surface of the semiconductor substrate; wherein for one or more selected dopants, the semiconductor layer is graded in a depth scale. The semiconductor material is configured to connect electrically the semiconductor layer to at least one positive surface on surface or top of the substrate.

Description

[0001] Cross References to Related Applications [0002] Korevaar and Johnson's nonprovisional application no. _______ (Attorney Docket No. 218409-1), entitled "METHOD AND APPARATUSFOR A SEMICONDUCTOR STRUCTURE," is hereby incorporated by reference in its entirety. technical field [0003] Embodiments described herein generally relate to one or more solar modules. More specifically, the described embodiments relate to one or more solar modules based on at least one semiconductor structure forming at least one via. Background technique [0004] Devices that rely on the presence of heterojunctions are well known in the art. As used herein, a "heterojunction" is generally formed by a contact between a layer or region of one conductivity type (eg, p-type) and a layer or region of the opposite conductivity type (eg, n-type) , thus forming a "p-n" junction. Examples of these devices may include thin film transistors, bipolar transistors, and photovoltaic devices (ie, solar cell...

Claims

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Application Information

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IPC IPC(8): H01L27/142H01L23/522
CPCH01L31/022425H01L31/022433Y02E10/50
Inventor B·A·科尔瓦尔J·N·约翰逊
Owner GENERAL ELECTRIC CO