Plasma processing device, plasma processing method and storing medium

Abstract

The invention provides a plasma processing device, a plasma processing method, and a storage medium, which is the technique for supplying component for reducing equipment, restricting complication of equipment structure for stable plasma processing. The plasma processing device connects a first high-frequency power source part selectively to a upper electrode (3) and a lower one (6) through a selector switch (51); a first matching circuit (41) and a second one (71) with automatic resistance value matching connect the high-frequency power source part (5) to a corresponding electrode in reference to data of a storage part with selected plasma type, and regulate the matching circuit as the resistance value adjusting circuit to a suitable value in the first matching circuit (41) and the second one (71).

Description

technical field [0001] The present invention relates to a plasma processing apparatus, a plasma processing method, and a storage medium that convert a processing gas into plasma by high-frequency power, and perform processing such as etching on a substrate by the plasma. Background technique [0002] In the manufacturing process of flat panels such as semiconductor devices and liquid crystal display devices, plasma is used to perform processes such as etching and film formation on substrates called semiconductor wafers and glass substrates. Plasma processing equipment such as etching equipment, plasma CVD film forming equipment, etc. [0003] FIG. 13 is a diagram showing a parallel plate type plasma processing apparatus described in Patent Document 1. As shown in FIG. In this plasma processing apparatus, for example, an upper electrode 12 serving also as a gas shower head serving as a gas supply unit is provided in a processing container 11 made of, for example, aluminum, a...

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Problems solved by technology

[0009] At this time, even when high-frequency power is applied to the same electrode, when the process conditions such as high-frequency applied power, processing gas, and processing pressure change, the appropriate impedance value of the impedance adjustment part is different. Stable plasma processing cannot be performed if the impedance value is not adjusted to an appropriate value.

However, Patent Document 1 does not pay attention to suppressing the complication of the device, switches the electrodes to which high-frequency power is applied from the high-frequency power supply unit, and adjusts the impedance value according to the process, and does not describe the solution.

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