Ferro-electricity programming information memory cell time sequence operation method using new type sequential operation

Abstract

The present invention discloses a ferroelectric programming information memory cell which adopts novel sequential operation, belonging to the semiconductor integrated circuit designing and manufacturetechnical field. The memory cell comprises a flip-latch, two gating tubes and two ferroelectric storage capacitors. The nonvolatile storage of information is realized by arranging ferroelectric capacitors onto a normal SRAM memory cell and applying a novel sequential operation to program the programming unit. The programming unit has a compact structure, the operational signal is generated easily, and operation time sequence is simple and is easy to realize, meanwhile circuit power consumption is reduced by a certain amount. The memory cell is suitable to use a programming unit in FPGA, so that the nonvolatile storage of the FPGA programming information is realized and the status of abrupt current failure can be coped with.

Description

technical field [0001] The invention belongs to the technical field of design and manufacture of semiconductor integrated circuits, and in particular relates to a ferroelectric programming information storage unit using a new type of sequential operation, especially a ferroelectric programming information storage unit applied in the field of FPGA (Field Programmable Gate Array). Non-volatile storage of information. Background technique [0002] FPGA (Field Programmable Gate Array) is a reconfigurable logic circuit implementation device. Users can program FPGA according to different needs to obtain various circuits with different functions, which has high flexibility. In the FPGA using the SRAM (static random read-write memory) structure programming unit, the on-off information of the circuit is stored in an SRAM, and the information stored in the SRAM is used to directly control the on-off of the MOS transistor or the multiplexer. The selection path can be programmed repeat...

AI Technical Summary

Problems solved by technology

The disadvantages of this unit are: (1) additional control tubes need to be added, which increases the area cost; (2) the control tube must be opened to store information before power off, which cannot cope with sudden power outages

The disadvantages of this unit are: (1) The generation of 0.5 programming voltage needs to add additional circuits, and the plate signal is always at 0.5 programming voltage, which is not conducive to the reduction of circuit power consumption. At the same time, in order to maintain the accuracy of the voltage, the design cost Increase; (2) Before power failure, information must be stored through storage operation, which cannot cope with sudden power failure

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