Flat plate silicon nitride film PECVD deposition system

Abstract

The invention discloses a slab silicon nitride film PECVD deposition system which comprises a deposition chamber, a radio frequency lead-in electrode, a heater and an air suction system; the deposition system is of a slab type; the deposition chamber is a slab type vacuum chamber; the radio frequency lead-in slab electrode is arranged on the lower part of an upper cover of the vacuum chamber; theheater is arranged outside the vacuum chamber and clings to the back of the electrode. Two sides of the vacuum chamber are respectively provided with a tapered buffering inlet chamber and a tapered buffering air suction chamber; the inlet chamber and the air suction chamber are respectively provided with an air inlet hole and an air suction hole; the air suction hole is connected with the air suction system. The radio frequency lead-in electrode comprises an electrode plate and an electrode frame; pylomes in regular arrangement are arranged on the electrode plate; the electrode plate and the upper cover of the electrode are alternately arranged under the upper cover of the vacuum chamber; composite fluorin plastic, a shielding cover and the electrode frame in turn are arranged on the upper cover of the electrode. The slab silicon nitride film PECVD deposition system can deposit hundreds of SiNx films of a 125mmx125mm silicon wafer, has high quality of film deposition and can achieve the needs of high uniformity and compactness.

Description

technical field [0001] The invention relates to a flat silicon nitride film PECVD deposition system. Background technique [0002] At present, the PECVD for production in the domestic market is mainly of tubular structure. The electrodes of this structure are multi-sheets connected in parallel, the width of the electrodes is about 140-150 mm, and a low-frequency power supply is used. After the sample is placed, the electrode is sent into the tubular PECVD, preheated and then deposited. [0003] The effective deposition area of ​​each part of the structural electrode is slightly larger than the area of ​​the deposited silicon wafer. The uniformity of the deposited sample film is not easy to control. Due to the tubular structure, the temperature near the tube wall is high, while the temperature of the tube core is relatively low, so the overall uniformity of temperature cannot be guaranteed. The inhomogeneity of the deposited film has a great influence on the quality of the...

AI Technical Summary

Problems solved by technology

The uniformity of the deposited sample film is not easy to control. Due to the tubular structure, the temperature near the tube wall is high, while the temperature of the tube core is relatively low, so the overall uniformity of temperature cannot be guaranteed. The inhomogeneity of the deposited film has a great influence on the quality of the material

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