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Sample platform system for in-situ measuring Na electronic device property in transmission electron microscope

A technology of nanoelectronic devices and electron microscopes, which is applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., and can solve problems such as the inability to measure the properties of nanoelectronic devices

Inactive Publication Date: 2008-10-01
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the technical problem that the current transmission electron microscopy technology cannot measure the properties of nanoelectronic devices, so as to realize the in situ research on the microstructure and properties of nanoelectronic devices

Method used

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  • Sample platform system for in-situ measuring Na electronic device property in transmission electron microscope
  • Sample platform system for in-situ measuring Na electronic device property in transmission electron microscope
  • Sample platform system for in-situ measuring Na electronic device property in transmission electron microscope

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Embodiment Construction

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0024] Such as figure 1 As shown, the sample stage system for measuring properties of nanoelectronic devices in situ in TEM mainly includes a front end 1 , a hollow sample rod 2 , and an insulating through-hole 3 arranged at the end of the sample rod. Wherein, the front-end head 1 includes a semiconductor chip 4 and a chip carrier 5, and the electrodes 6 on the semiconductor chip are electrically connected to the external connecting wires through which the insulation penetrates through the wires 7 passing through the hollow sample rod. The front-end head 1 is mechanically connected to one end of the sample rod 2, and the end of the sample rod 2 is mechanically vacuum-sealed with an insulating penetration 3 through a gasket.

[0025] Such as figure 2 As shown, a schematic diagram of the structure of the front end of the sample stage is given. The front end...

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Abstract

The invention discloses a sample stage system for measuring the property of the sodium electronic instrument in original position in a transmission electronic microscope. The system comprises a sample stage front end head, a hollow sample rod, and an insulating channel arranged in the end of the sample rod. The electrode of a semiconductor is electrically connected to the outer-connecting lead wire traversed by the insulating channel via the lead wire of the hollow sample rod, and further connecting to the outer analyzing test meter to research the property of the sodium electronic instrument. The precise size assures the TEM electronic beam can orderly traverse the gap of the semiconductor chips and the through hole of the chip carrying stage, focused on the sodium electronic instrument of the upper surface of thee chap gap, in that way the method directly represents the micro-structure of the sodium electronic instrument. Thereby, the invention achieves the original position research of the property of the sodium electronic instrument and the micro-structure.

Description

technical field [0001] The invention belongs to the field of transmission electron microscope accessories and nanometer measurement, and specifically relates to a sample stage system for in-situ measurement of properties of nanoelectronic devices in a transmission electron microscope. technical background [0002] With the gradual increase in the integration of microelectronic devices based on traditional technology, the size of the device needs to be smaller and smaller. The current mainstream technology is less than 0.1 micron, which is close to the limit that can be satisfied by the laws of classical physics. According to Moore's law, every 18 months, the device integration level will be doubled, while the size will be reduced by half. According to the current speed, within the next 10 to 15 years, traditional microelectronic devices will reach their theoretical limit size and become smaller. The level of integration cannot be further increased. [0003] Since the charac...

Claims

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Application Information

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IPC IPC(8): G01N13/10G01R31/00G01Q60/12
Inventor 刘开辉白雪冬王恩哥
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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