Semiconductor light emitting device and method for manufacturing the same
A technology for light-emitting devices and manufacturing methods, applied to semiconductor devices, electric solid-state devices, electrical components, etc., which can solve problems such as inability to extract light, inability to obtain high-performance semiconductor light-emitting devices, inability to reduce resistance of components, and increase light extraction efficiency. Improve light extraction efficiency and reduce series resistance
Active Publication Date: 2008-10-01
ALPAD CORP
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Problems solved by technology
However, if the electrodes are mounted up and down, light cannot be extracted from the electrode part.
Therefore, the above-mentioned method of mutually enhancing the light in the vertical direction by using the interference effect on the back cannot be used.
In this way, in ordinary semiconductor light emitting devices, both low resistance of the element and improvement of light extraction efficiency cannot be coexisted, and high performance semiconductor light emitting devices cannot be obtained.
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[0047] Embodiments of the present invention will be described below with reference to the drawings. In the following description of the drawings, the same or similar symbols are given to the same or similar parts. However, the drawings are schematic diagrams, and it should be noted that the relationship between the thickness and the planar size, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, the specific thickness or size should be judged with reference to the following description. In addition, of course, there are also parts in which mutual dimensional relationships or ratios are different among the drawings.
[0048] The LED chip (20, 2, 22) related to the semiconductor light emitting device according to the embodiment of the present invention is such as figure 1 and figure 2 As shown, the first electrode 20, the semiconductor layer 2, and the second electrode 22 are included. The semiconductor layer 2 includes a f...
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A semiconductor light emitting device, includes an active layer radiating a light having a predetermined wavelength lambda; a first semiconductor layer of a first conductivity type, provided on the active layer. A semiconductor substrate has a first principal surface in contact with the active layer, a second principal surface facing the first principal surface, and side surfaces connected to the second principal surface. Each of the side surfaces has a bevel angle in a range from about 45 degrees to less than 90 degrees with respect to the second principal surface. A second semiconductor layer of a second conductivity type is provided under the active layer. A first electrode is provided under the second semiconductor layer. A distance d between the active layer and the first electrode depends on the wavelength lambda and a refractive index n of the second semiconductor layer.
Description
technical field [0001] The present invention relates to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] In semiconductor light-emitting devices such as light-emitting diodes (LEDs), the refractive index of the semiconductor material of the semiconductor light-emitting device is larger than that of air or resin in contact with the semiconductor material. Therefore, total reflection occurs at the interface between the semiconductor material and air or resin, and the light extraction efficiency is extremely low. In order to improve the light extraction efficiency, we have developed various technologies such as device shape processing, surface texture structure, and photonic crystallization. [0003] As one of such techniques, a technique for improving light extraction efficiency by utilizing interference with reflected light from a rear surface electrode has been reported (for example, refer to Patent Document 1). In gal...
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IPC IPC(8): H01L33/00H01L33/06H01L33/32H01L33/56H01L33/62
CPCH01L33/02H01L33/20H01L2224/48091H01L2224/73265H01L2924/181H01L2924/00014H01L2924/00012
Inventor 波多腰玄一斋藤真司服部靖布上真也
Owner ALPAD CORP