Method for manufacturing bonded substrate

A technology for laminating substrates and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as operational errors, difficulty in taking out, difficulty in identifying the surface and the back, and achieve the effect of preventing direct contact

Active Publication Date: 2008-10-22
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As one of such problems, for example, when the SOQ substrate is transported and fixed on the device, it is difficult to take out the wafer from the platform due to its close con

Method used

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  • Method for manufacturing bonded substrate
  • Method for manufacturing bonded substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] A bonded substrate was produced by implementing the method for producing a bonded substrate of the present invention to roughen the back surface.

[0115] A silicon substrate with a diameter of 150 mm was prepared as a donor wafer, and a silicon oxide film of 100 nm was formed on the surface thereof by thermal oxidation. Hydrogen ions are implanted into the substrate through the silicon oxide film to form an ion implantation layer. The ion implantation conditions are implantation energy of 35keV, implantation dose of 9×10 16 / cm 2 , The implantation depth is 0.3nm.

[0116] Furthermore, a quartz substrate with a diameter of 150 mm was prepared as a support sheet.

[0117] Next, using a plasma processing apparatus, nitrogen gas was introduced as a gas for plasma, and surface activation treatment was performed on the ion-implanted surface of the prepared silicon substrate and the surface of the quartz substrate.

[0118] Then, a bonded substrate was produced. These su...

Embodiment 2

[0125] The same sample wafer as in Example 1 was prepared.

[0126] A dicing tape was directly attached as a protective tape to the surface of the silicon thin film side of the sample wafer, and the back surface of the sample wafer was subjected to sandblasting in the same manner as in Example 1.

[0127]After blasting, the dicing tape is peeled off from the silicon film and cleaned with ultrasonic water. Then, by immersing the sample wafer in a hydrofluoric acid solution, the back surface of the sandblasting sample wafer (the back surface of the quartz substrate) was etched to manufacture a bonded substrate with a roughened back surface.

[0128] In this way, for the bonded substrate produced by the production method of the present invention, when evaluating the state of the front surface and the back surface, although some peeling of the silicon thin film from the quartz substrate and peeling of the surface of the silicon thin film were confirmed on the front side, it was st...

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PUM

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Abstract

When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.

Description

technical field [0001] The present invention relates to a method for manufacturing a bonded substrate, in particular to a method for manufacturing a bonded substrate with a silicon thin film formed on the surface of an insulating substrate. Background technique [0002] In order to further improve the performance of semiconductor devices, silicon-on-insulator (SOI (Silicon on insulator)) substrates have attracted attention in recent years. In addition, support substrates (handle wafers) that are not silicon, such as SOQ (Silicon on quartz) substrates and SOG (Silicon onglass) substrates, are also expected to be applied to TFT-LCDs. Or high-frequency (RF) devices, other micro-electro-mechanical systems (MEMS) products, etc. [0003] Above-mentioned SOQ substrate etc., propose a kind of manufacturing method, be for example to use silicon substrate as donor wafer (donor wafer), with quartz substrate as support plate, and these dissimilar substrates are laminated and manufactur...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02H01L21/20H01L21/762H01L21/84
Inventor 秋山昌次久保田芳宏伊藤厚雄田中好一川合信飞坂优二
Owner SHIN ETSU CHEM IND CO LTD
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