Semiconductor device

Abstract

Provided is a semiconductor device that is capable of suppressing occurrence of a crystal defect in an elongated circuit region formed in an SOI substrate. Low-voltage transistor regions are separated, by multiple inner isolation layers, into multiple sub-regions. For this reason, the length of the longitudinal direction of the sub-regions is reduced, even though the low-voltage transistor regions are extremely elongated, for example. This configuration can suppress occurrence of a crystal defect in the low-voltage transistor regions in the longitudinal direction thereof, although such defect may occur due to the difference in thermal expansion or thermal contraction between a semiconductor layer in the low-voltage transistor regions, and the element isolation layers.

Description

technical field [0001] The present invention relates to a semiconductor device in which a semiconductor circuit is formed in an SOI (Semiconductor On Insulator) substrate. More specifically, the present invention relates to a semiconductor device in which a plurality of semiconductor circuits are formed in an array in a circuit element region of an SOI substrate. Background technique [0002] Refer to Figure 4 and Figure 5 , a conventional example of a semiconductor device in which a semiconductor circuit is formed in an SOI substrate will be described hereinafter, Figure 5 is a schematic longitudinal sectional view taken along line X-X' in FIG. 4 . The semiconductor device 100 shown here as an example includes an SOI substrate in which a semiconductor layer 113 is stacked on a semiconductor substrate 111 with an intermediate insulating layer 112 interposed therebetween. [0003] In the semiconductor layer 113, a plurality of low-voltage transistor regions 121 to 124 are ...

AI Technical Summary

Problems solved by technology

[0017] For this reason, during the manufacturing process of the semiconductor device 100, the elongated low-voltage transistor regions 121 to 124 may have crystal defects in their longitudinal directions, and such crystal defects may cause leakage current at the P-N junction.

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