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Epitaxial wafer for light-emitting diodes

A technology of light-emitting diodes and epitaxial wafers, which is applied in the field of epitaxial wafers for light-emitting diodes, and can solve the problems of shortening the light-emitting wavelength and other issues

Inactive Publication Date: 2013-03-13
RESONAC HOLDINGS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the quantum effect obtained by applying the quantum well structure shortens the emission wavelength, there is a problem that it cannot be applied to a technology with a longer wavelength.

Method used

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  • Epitaxial wafer for light-emitting diodes
  • Epitaxial wafer for light-emitting diodes
  • Epitaxial wafer for light-emitting diodes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0145] In the light-emitting diode of Example 1, first, epitaxial growth layers are sequentially stacked on a semiconductor substrate made of Si-doped n-type GaAs single crystal to form an epitaxial wafer. The n-type GaAs substrate uses the plane inclined 15° from the (100) plane to the (0-1-1) direction as the growth plane, and the carrier concentration is set to 2×10 18 cm -3 .

[0146] As the epitaxial growth layer, on the n-type GaAs substrate, a buffer layer composed of Si-doped n-type GaAs, a buffer layer composed of Si-doped n-type (Al 0.5 Ga 0.5 ) 0.5 In 0.5 Low resistance layer composed of P, n-type Al doped with Si 0.5 In 0.5 The lower cladding layer composed of P, undoped Ga as the strained light-emitting layer 0.42 In 0.58 P and undoped (Al 0.53 Ga 0.47 ) 0.51 In 0.49 The light-emitting part where P is alternately stacked, and the p-type Al doped with Mg 0.5 In 0.5 The upper cladding layer composed of P, the (Al 0.6 Ga 0.4 ) 0.5 In 0.5 P, and p-ty...

Embodiment 2）

[0162] In the light-emitting diode of Example 2, instead of the strained light-emitting layer provided in the light-emitting diode of Example 1, an undoped Ga 0.36 In 0.64 Except that P was used as the strained light-emitting layer, it was formed in the same manner as the light-emitting diode of Example 1.

[0163] As shown in Table 1, in the case of the light-emitting diode of Example 1, the following good results were obtained: the peak emission wavelength was 681.5 nm, there were no surface defects, and the deviation of the peak emission wavelength in the substrate plane was as small as 2.6 nm. , the output power was 3.5mW, and the output power ratio before and after the power-on test was 98%.

Embodiment 3）

[0165] In the light-emitting diode of Example 3, instead of the strained light-emitting layer provided in the light-emitting diode of Example 1, an undoped Ga 0.35 In 0.65 P serves as the strained light-emitting layer, and instead of the barrier layer provided in the light-emitting diode of Example 1, an undoped (Al 0.53 Ga 0.47 ) 0.54 In 0.46 P is formed similarly to the light emitting diode of Example 1 except for this.

[0166] As shown in Table 1, in the case of the light-emitting diode of Example 3, the following good results were obtained: the peak emission wavelength was 685.3 nm, there was no surface defect, and the deviation of the peak emission wavelength in the substrate plane was as small as 2.5 nm. , the output power was 3.1mW, and the output power ratio before and after the power-on test was 98%.

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Abstract

Disclosed is an epitaxial wafer for light-emitting diodes, wherein the peak light-emitting wavelength is 655 nm or more and it is possible to improve reliability. Specifically disclosed is an epitaxial wafer for light-emitting diodes which is provided with a GaAs substrate (1) and a pn-junction type light-emitting unit (2) disposed on the GaAs substrate (1), wherein the light-emitting unit (2) is formed as a laminate structure in which a distortion light emitting layer and a barrier layer are alternately laminated, and the compositional formula of the barrier layer is (AlxGa1-x)YIn1-YP (0.3<=X<=0.7, 0.51<=Y<=0.54).

Description

technical field [0001] The invention relates to an epitaxial wafer for a light emitting diode, in particular to an epitaxial wafer for a high output power light emitting diode. [0002] this application claims the priority based on the patent application 2010-154202 for which it applied to Japan on July 6, 2010, The content is used for this application. Background technique [0003] In recent years, plant cultivation using artificial light sources has been studied. In particular, cultivation methods using light-emitting diodes (abbreviation: LEDs), which are excellent in monochromaticity and capable of energy saving, long life, and miniaturization, have attracted attention. [0004] In addition, from the research results so far, the effect of red light with a wavelength of 600 to 700nm has been confirmed as one of the light emission wavelengths suitable for plant cultivation (photosynthesis). [0005] With regard to wavelengths in this range, application of light emitting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/12
CPCA01G9/20H01L33/30H01L33/12H01L33/16A01G7/045H01L33/06Y02P60/14H01L33/04
Inventor 濑尾则善松村笃竹内良一
Owner RESONAC HOLDINGS CORPORATION
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