Epitaxial structure and growth method of InGaN quantum dots

Abstract

The invention discloses an epitaxial structure of an InGaN quantum dot and a growth method of the InGaN quantum dot. The epitaxial structure comprises a substrate made of sapphire, silicon, silicon carbide, gallium nitride or gallium arsenide; a GaN template layer which grows on the substrate; an InGaN quantum dot layer which grows on the GaN template layer; a first InGaN cover layer which grows on the InGaN quantum dot layer; a second InGaN cover layer which grows on the first InGaN cover layer; and a GaN cap layer which grows on the second InGaN cap layer. The InGaN quantum dot layers, the InGaN cover layer and the GaN cover layer are arranged periodically, and the InGaN quantum dot layers, the InGaN cover layer and the GaN cover layer sequentially and repeatedly grow on the GaN cover layer. By adopting a composite barrier layer structure, the adverse effect of the high-temperature growth process of the GaN barrier layer on the high-In-content InGaN quantum dot is inhibited, so that the long-wavelength luminous efficiency of the InGaN quantum dot material is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an epitaxial structure and a growth method of InGaN quantum dots. Background technique [0002] Compared with the traditional quantum well structure, InGaN quantum dots have a special three-dimensional confined structure, which can not only weaken the quantum confinement Stark effect (QCSE), which is unfavorable for material luminescence, but also has high thermal stability and is insensitive to defects. Etc. Therefore, if InGaN quantum dots are used as the active region material, it will help to improve the luminous efficiency of GaN-based optoelectronic devices. [0003] However, in the actual epitaxial growth process, in order to improve the crystal quality of the material, the growth temperature of the GaN barrier layer wrapping the InGaN quantum dots is required to be above 800°C. However, higher temperature can easily lead to the breakage of In-N bond, ...

AI Technical Summary

Problems solved by technology

Therefore, the traditional single-layer GaN barrier structure is not conducive to the epitaxial growth of high-density and high-In composition InGaN quantum dot materials, which seriously restricts the development and application of long-wavelength GaN-based optoelectronic devices.

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