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Method for evaluating crystal defects, method for manufacturing silicon wafer, and apparatus for evaluating crystal defects

A technology of crystal defects and evaluation methods, which is applied in the direction of measuring devices, optical devices, optical testing of defects/defects, etc., can solve problems such as tester bias, and achieve the effect of suppressing the deviation of evaluation results

Active Publication Date: 2020-04-03
SUMCO CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the above-mentioned visual evaluation is a sensory evaluation, there is a problem that the evaluation results vary among testers.

Method used

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  • Method for evaluating crystal defects, method for manufacturing silicon wafer, and apparatus for evaluating crystal defects
  • Method for evaluating crystal defects, method for manufacturing silicon wafer, and apparatus for evaluating crystal defects
  • Method for evaluating crystal defects, method for manufacturing silicon wafer, and apparatus for evaluating crystal defects

Examples

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Embodiment

[0103] (Invention Example 1)

[0104] First, by the CZ method, a single crystal silicon ingot having a diameter of 300 mm in a COP occurrence region was grown. Secondly, wafer processing was performed on the grown silicon ingot to obtain a silicon wafer (thickness: 1 mm, resistivity: 10-12 Ω·cm, oxygen concentration: 9-13×10 17 atoms / cm 3 (ASTM F121 1979)). The above-mentioned silicon wafer was subjected to acid-based chemical etching treatment and cleaned, and then copper decoration treatment was performed. Then, a silicon wafer was etched using Wright's solution to obtain a sample.

[0105] Next, the sample obtained in the above manner was scanned using a line scan camera (manufactured by DALSA, model: P2-2X-04K40) to obtain a one-dimensional image, and the obtained one-dimensional images were connected to obtain a two-dimensional image of 256 levels.

[0106] Next, differential processing (Sobel) and binarization processing (threshold value: 40) were performed on the im...

example 1

[0111] Similar to Invention Example 1, crystal defects in samples of silicon wafers were evaluated. However, image capture to image processing were not carried out, but the surface of the processed sample was visually observed by 5 measurers, and crystal defects were evaluated. Other conditions are exactly the same as Invention Example 1. The obtained results are shown in Table 1.

[0112] (Invention Example 2)

[0113] Similar to Invention Example 1, crystal defects in samples of silicon wafers were evaluated. However, silicon wafers are taken from single crystal silicon in the dislocation cluster region. Other conditions are exactly the same as Invention Example 1. The obtained results are shown in Table 1.

[0114] (existing example 2)

[0115] Similar to Conventional Example 1, crystal defects in samples of silicon wafers were evaluated. However, silicon wafers are taken from single crystal silicon in the dislocation cluster region. Other conditions are exactly the s...

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Abstract

The present invention provides an evaluation method of a crystal defect, a method of manufacturing a silicon wafer, and an apparatus for evaluating crystal defects, which suppress variation in the evaluation result between the measurement persons. The method for evaluating crystal defects is characterized in that a process of developing a crystal defect in the silicon wafer is performed on a silicon wafer (step S1), a surface of the silicon wafer is photographed next to acquire an image (step S2), and then the above image The differential processing and the binarization processing are sequentially performed (step S3), and the crystal defects in the silicon wafer are evaluated based on the image subjected to the binarization processing (step S4).

Description

technical field [0001] The present invention relates to a method for evaluating crystal defects, a method for manufacturing a silicon chip and an evaluation device for crystal defects. Background technique [0002] A Czochralski (Czochralski, CZ, Czochralski) method is widely used as a method for growing (cultivating) a silicon single crystal. The CZ method refers to a method of immersing a seed crystal in molten silicon supplied to a quartz crucible, pulling the seed crystal while rotating the quartz crucible and the seed crystal, and growing a single crystal silicon ingot under the seed crystal. [0003] Various grown-in defects are generated in the grown silicon single crystal ingot, and these grown-in defects become problems in the device manufacturing process. Representative native defects include: dislocation clusters generated in the interlattice silicon-dominated region (hereinafter also referred to as "I region") by growth under low-speed pulling conditions, and di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/95G01B11/00
CPCG01B11/00G01N21/9501
Inventor 清水泰顺高梨启一北村贵文北山乔之
Owner SUMCO CORP
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