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Method for drying wafer

A drying method and wafer technology, applied in the direction of drying solid materials, heating to dry solid materials, drying, etc., can solve problems such as photoresist pattern deformation, and achieve the effect of maintaining integrity, avoiding damage, and prolonging contact time.

Active Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The invention provides a wafer drying method to improve the phenomenon that the photoresist pattern on the wafer is easily deformed in the existing wafer drying method

Method used

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  • Method for drying wafer
  • Method for drying wafer
  • Method for drying wafer

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Embodiment Construction

[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and the following is to illustrate by specific embodiment, certainly the present invention is not limited to this specific embodiment, in this field Common replacements known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.

[0038] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the structure will not be partially enlarged according to the general scale, which should not be used as ...

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Abstract

The invention discloses a wafer drying method which comprises the following steps: a wafer is placed on a wafer shelf; the wafer shelf is placed in deionized water inside a water tank of a desiccator; nitrogen is led into the desiccator; the wafer shelf is raised; the wafer shelf is kept static after the wafer is completely exposed above the water surface, and the nitrogen inletting is continued;the nitrogen inletting is stopped and the wafer shelf is taken out. Under the precondition that better drying effect of the wafer is kept, the wafer drying method of the invention can avoid optical resist figures on the wafer surface from being damaged by hot IPA vapor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer drying method. Background technique [0002] In semiconductor process manufacturing, in order to prevent moisture from adhering to the wafer, it is usually necessary to dry the wafer after cleaning to completely remove the moisture attached during cleaning. [0003] Existing wafer drying methods mainly include spin drying and steam drying. The spin drying method uses a spinner to rotate the wafer at high speed to remove the water by centrifugal force, while the steam drying method uses the vapor of isopropanol (IPA) which has good miscibility with water to replace the water attached to the wafer with IPA. , thereby removing the moisture. Among them, for the spin drying method, on the one hand, it is easy to contaminate the wafer; on the other hand, because it may charge the wafer, it can no longer meet the needs of the increasingly stringent semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F26B3/06
Inventor 翟冬梅代培刚戚东峰
Owner SEMICON MFG INT (SHANGHAI) CORP