Semiconductor gas sensor for alcohol steam and expiration alcohol detection
A gas sensor, breath alcohol technology, applied in instruments, measuring devices, scientific instruments, etc., to achieve the effect of good selectivity, excellent sensitivity and accuracy
Active Publication Date: 2012-05-23
郑州炜盛电子科技有限公司
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] At present, there is no domestic manufacturer producing semiconductor gas sensors made of Sn nano-oxides as the main material
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0023] Take the following raw materials: 6.0 grams of nano-SnO 2 , 0.6 g ZnO, 0.3 g La 2 o 3 , 1.0 g Al 2 o 3 , 0.8 g SiO 2 , 0.2 grams of MgO, 0.2 grams of CaO, 0.1 grams of Sb 2 o 3 , 0.12 grams of Pd / PdO / Pd and 0.18 grams of Pt / PtO / Pt, spare.
[0024] Take 6.0 g of nano-SnO 2 , 0.6 g ZnO, 0.3 g La 2 o 3 , 1.0 g Al 2 o 3 , 0.8 g SiO 2 , 0.2 grams of MgO, 0.2 grams of CaO, 0.1 grams of Sb 2 o 3 , become a sensitive body after co-precipitation, doping or solid phase mixing and sintering. Then 0.12 grams of Pd / PdO / Pd and 0.18 grams of Pt / PtO / Pt are doped into the sensitive body, and after grinding, coating and sintering, the semiconductor gas sensor is obtained.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a semiconductor gas sensor used for alcohol steam and expiration alcohol detection. The semiconductor gas sensor adopts the raw materials as follows: SnO2, ZnO, La2O3, Al2O3, SiO2, MgO, CaO, Sb2O3, Pd / PdO / Pd and Pt / Pto / Pt to form the sensitive material by coprecipitation, mixing or solid-phase mixing. The invention also relates to a preparation method of the semiconductorgas sensor. The gas sensor of the invention has excellent sensitiveness and exactness to the alcohol steam or the expiration alcohol, is hardly disturbed or not disturbed by alkanes and has good selection on the alcohol; therefore, the semiconductor gas sensor and the preparation method thereof are especially suitable for the excessive drinking detection of industrial environment, high-risk operation people and locomotive drivers.
Description
technical field [0001] The invention relates to the field of gas sensors, in particular to a semiconductor gas sensor used for alcohol vapor and breath alcohol detection. Background technique [0002] At present, there is no domestic manufacturer producing semiconductor gas sensors made of Sn nano-oxides as the main material. Abroad, there is Figaro semiconductor gas sensor made of Sn nano-oxide as the main material, but the formula is different from the present invention. In addition, there are some sensors made by catalytic principle or infrared principle. The working principle of the catalytic element is that when the catalyst on the platinum heating wire is in contact with combustible gas, the gas burns due to the action of the catalyst, causing the temperature to rise, resulting in an increase in the resistance of the platinum wire, so as to detect combustible gas. The detection principle of the infrared gas analyzer is that for infrared light in the wavelength range ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12G01N27/00G01N33/98
Inventor 钟克创
Owner 郑州炜盛电子科技有限公司
