Capacitor and manufacturing method thereof

Abstract

The invention discloses a capacitor and a method for preparing the capacitor, wherein the capacitor comprises a first dielectric layer, a plow groove which is arranged in the first dielectric layer and is provided with a first diameter, a first conducting layer which is adaptively arranged in the plow groove and on the bottom and the side wall of the first dielectric layer which are exposed outside the plow groove, a plurality of conducting inserted pins which are arranged on the bottom of the first conducting layer, the conducting inserted pins are apart with a certain distance with each other, a capacitance layer which is adaptively arranged on the conducting inserted pins and the surface of the first conducting layer, and a fourth conducting layer which covers on the capacitance layer, wherein the second conducting layer, the conducting inserted pins and the first conducting layer are electrically insulated by the capacitance layer. The invention further provides a corresponding method to form the capacitor.

Description

Technical field [0001] The present invention relates to a semiconductor storage device, and more particularly to a capacitor used in the semiconductor storage device and a manufacturing method thereof. Background technique [0002] A dynamic random access memory (DRAM) is a volatile memory, and its storage of digital signals is achieved by charging / discharging a capacitor in it. When the power supply to the above-mentioned dynamic random access memory is turned off, the data stored in the memory will be completely erased. Generally speaking, a dynamic random access memory includes at least a field effect transistor (FET) and a capacitor (capacitor), where the capacitor is used to store the signal of the memory cell in the dynamic random access memory. [0003] In recent years, with the shrinking trend of the memory cell size of dynamic random access memory, although the size of the memory cell is gradually shrinking, the capacitor in the memory cell must still have a certain amou...

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Problems solved by technology

[0005] However, the above-mentioned application technology of growing hemispherical dies of silicon materials usually requires extremely high process temperature and process execution time, and the size of the grown hemispherical dies is often limited by the size of the capacitor manufacturing space such as trenches. , so it is not easy to integrate in the fabrication of DRAM using capacitors placed in trenches

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