Light element device and method for manufacturing same

A technology for light-emitting components and manufacturing methods, which is applied to electrical components, electrical solid-state devices, semiconductor devices, etc., and can solve problems such as failure, overflow light-emitting diodes, and extrusion of bonding layers.

Active Publication Date: 2009-02-04
EPISTAR CORP
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bonding of the solder layer will cause the molten bonding layer to extrude and even overflow to the side wall of the light-emitting diode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light element device and method for manufacturing same
  • Light element device and method for manufacturing same
  • Light element device and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Please refer to Figure 3A The light-emitting device according to the present invention includes a light-emitting diode 40 and a base unit 50. The light emitting diode 40 includes a transparent substrate 41 whose material is, for example, Al 2 O 3 , GaN, glass, GaP, SiC, or CVD diamond; the first contact layer 42 is formed on the transparent substrate 41, the first contact layer 42 has a first area a and a second area b; the light-emitting stack 43 is substantially formed on the first A first area a and a second area b on a contact layer 42. The light emitting stack includes a first electrical type semiconductor layer 431, an active layer 432, and a second electrical type semiconductor layer 433 in sequence. The layer 43 emits light when driven by voltage, and its material can be red, yellow, or green light (Al z Ga 1-z ) 0.5 In 0.5 P quaternary series, or Al that emits blue or purple light x In y Ga (1-x-y) N gallium nitride series; the second contact layer 44 corresponds ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a luminous element and a fabrication method thereof. The luminous element comprises a luminous diode and a pedestal; wherein the luminous diode is composed of electrodes and a junction layer formed on the electrodes, and the pedestal comprises a junction pad and a plurality of lug bosses and/or pits which are formed on the junction pad. The method for fabricating the luminous diode includes the following steps: providing a luminous diode which has electrodes and a junction layer which is arranged on the electrodes; providing a pedestal which comprises at least a junction pad; forming a plurality lug bosses and/or pits on the junction pad; and jointing the luminous diode and the pedestal.

Description

Technical field [0001] The present invention relates to a light-emitting element and a manufacturing method thereof. Background technique [0002] In the application of light emitting diodes (Light Emitting Diodes; LEDs) in high-power lighting applications, in addition to continuing to increase the brightness, heat dissipation is another major issue that needs to be resolved. When the light extraction efficiency of the light emitting diode is not good, the light that cannot pass through the light emitting element (the light emitting diode and its package) will be converted into heat energy. If the heat energy cannot be effectively conducted out of the light-emitting element, the temperature of the light-emitting diode will rise during operation, thus causing reliability problems of the element. In the prior art, many methods have been proposed to solve the heat dissipation problem of components. For example, in the growth of gallium nitride series light-emitting diodes on sapphir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01L23/488H01L23/498H01L33/62
CPCH01L2924/0002H01L2224/73257H01L2224/48463
Inventor 林锦源
Owner EPISTAR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap