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Method for cleaning reaction cavity interior

A reaction chamber and cleaning gas technology, applied in chemical instruments and methods, from chemical reactive gases, crystal growth, etc., can solve the problems of increasing production costs, waste, etc., to reduce losses, reduce production costs, and save cleaning gases Effect

Inactive Publication Date: 2009-02-11
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the cleaning rate drops, the same amount of cleaning gas is still charged. A large part of the cleaning gas is wasted because it cannot react with the deposited film in the reaction chamber in time, which increases the production cost.

Method used

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  • Method for cleaning reaction cavity interior
  • Method for cleaning reaction cavity interior

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Embodiment Construction

[0013] The invention provides a method for cleaning the interior of the reaction chamber, which divides the cleaning process into several steps to complete. Experiments have proved that, in the same cleaning time, the average flow rate of the initial cleaning gas charged is the same, and the method of the present invention is used method, can achieve basically the same cleaning effect as the previous cleaning method, and save a lot of cleaning gas than the previous cleaning method.

[0014] The present invention divides the cleaning process into several time periods. In each time period, the cleaning gas is filled into the reaction chamber with a uniform flow rate. In the first time period, the cleaning gas with the initial average flow rate is filled. The initial average flow rate of the cleaning gas in the segment is the same as the average flow rate of the gas in the reaction chamber in the prior art, and the average flow rate of the cleaning gas charged in each time segment...

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Abstract

The invention provides a method for cleaning the inner of the reaction cavity, which is a reaction cavity cleaning method after the plasma enhanced chemical vapor deposition. In this method, the pre-settled cleaning time is divided into several periods of time, and the cleaning gas filled into the reaction cavity in each period of time is decreased one after another. Compared with the previous cleaning methods, the cleaning method can not only achieve the same effect almost, but also save a large quantity of cleaning gas and reduce the consumption of cleaning gas effectively, thereby reducing the cost of production.

Description

technical field [0001] The invention relates to a semiconductor cleaning process, in particular to a method for cleaning the inside of a reaction chamber. Background technique [0002] With the rapid development of semiconductor technology, the feature size of semiconductor devices has been significantly reduced, and correspondingly higher requirements have been placed on the chip manufacturing process. One of the challenging problems is that the insulating medium is uniform and non-porous between the various film layers. Filling to provide sufficient and effective isolation protection, including shallow trench isolation (STI), pre-metal insulating layer (PMD), inter-metal insulating layer (IMD) and so on. Among them, the high-density plasma chemical vapor deposition (HDP CVD) process has been adopted by advanced chip factories since the mid-1990s, with its excellent hole filling ability, stable deposition quality, reliable electrical characteristics and many other Advantag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00
Inventor 张炳一牟善勇
Owner GRACE SEMICON MFG CORP