Semiconductor device and method for fabricating the same

Abstract

Embodiments relate to the lowered reliability of a device due to deterioration caused by the concentration of an electric field in the top corner of an STI. To solve the reliability problem, the STI top corners have a local oxidation of silicon, the top corners of the STI are rounded, and the STI steps are increased in a semiconductor device fabricated according to embodiments. Embodiments relateto an STI in high and low voltage regions of a semiconductor device which can be fabricated by providing a semiconductor substrate having a shallow trench isolation structure, a high voltage region and a low voltage region. A capping layer is formed over the entire surface of the top of the high voltage region and the low voltage region, including the shallow trench isolation structure. A photoresist pattern is formed over the top of the capping layer to expose the high voltage region, including a portion of the shallow trench isolation structure formed within the high voltage region. The capping layer of the high voltage region is removed by performing an etching process using the photoresist pattern as a mask. An oxidation process is performed on the shallow trench isolation structure top corners of the high voltage region from which the capping layer is removed. An ion implantation is then carried out. The ion implantation may be carried out by implanting boron using a tilt method.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0090912 (filed on September 7, 2007) based on 35 U.S.C119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device and a manufacturing method thereof, which can solve reliability problems of HV devices, which may arise during the manufacturing process of high voltage or high power devices In conventional STI (Shallow Trench Isolation, hereinafter, referred to as STI). Background technique [0003] As integrated circuits having various functions coexist in the same product, and semiconductor circuits become more highly integrated, there is a demand for high-voltage or high-power transistors for driving multiple voltages and currents. A thin film transistor-liquid crystal device (thin film transistor-liquid crystal device) includes a driving circuit and a ...

AI Technical Summary

Problems solved by technology

As a result, the doping concentration is reduced (S1) and anomalous sub-threshold leakage can occur in high-voltage or high-power transistor devices

In addition, the concentration of an electric field (eg, sharpening phenomenon) may cause degradation, thereby reducing device reliability

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