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Photocathode of nano second response gleam image intensifier and manufacturing method thereof

A low-light image intensifier and photocathode technology, which is applied in the manufacture of light-emitting cathodes, photoemission cathodes, and main electrodes of discharge tubes, can solve the problems of limited and unfavorable nanosecond response event recording and imaging analysis, and achieve fast response , The effect of improving production efficiency

Inactive Publication Date: 2009-03-25
CHINA NORTH IND NO 205 RES INST
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Problems solved by technology

In addition, the effective diameter of the imaging area is extremely limited to Φ17.5mm, which is not conducive to the recording and imaging analysis of nanosecond response events

Method used

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  • Photocathode of nano second response gleam image intensifier and manufacturing method thereof

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and preferred embodiments.

[0027] according to figure 1 As shown, the preferred embodiment of the nanosecond response photocathode of the present invention includes a photocathode window 1, a conductive ring 2, a nanosecond response conductive film 3, and a photoemissive layer 4, and the photocathode window 1 is a disc member with a truncated protrusion It is made of JGS-1 quartz glass, the outer diameter of the disk is Φ52mm, the effective diameter of the small end of the round table protrusion is Φ30mm, and the effective diameter of the large end is Φ40mm. The conductive ring 2 is a Ni-Cr film made of 99.999% Ni material and 99.999% Cr material with a purity of 99.999%, wherein the thickness of the Ni film is 0.1 μm, and the thickness of the Cr film is 0.08 μm. The Ni film is on the bottom and the Cr film is on the stepped surface and the convex side of the...

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Abstract

The invention discloses a photoelectric cathode of a nanosecond glimmer light image enhancer and the manufacturing method thereof. The photoelectric cathode is based on a Phi 18mm polybasic S20 millisecond responding photoelectric cathode, the effective diameter thereof is Phi 30mm; a conducting film is a nickel film in the thickness of nanosecond responding level 0.08 Mum; and a photoelectric emission layer is a CsNa2KSb layer in the thickness of 500 nm. During the process of preparing the photoelectric emission layer, a layer of K film in the thickness of 30 nm is formed by vapor deposition firstly, thereby facilitating the monitoring of a photoelectric current monitor controller to the film thickness in each stage during the process of preparing the photoelectric emission layer. The photoelectric cathode can well solve the problems during the process of recording the nuclear explosion process or other nanosecond responding events by using a glimmer imaging deice in the prior art, such as low speed in time response, lost event details, small effective area, small information capture and illegible details.

Description

technical field [0001] The invention belongs to the technical field of photoelectric imaging, and mainly relates to a low-light image intensifier with nanosecond response, in particular to a nanosecond-response photocathode with a large effective diameter used in the low-light image intensifier and a manufacturing method thereof. Background technique [0002] As the core component of the low-light image intensifier—the photocathode, it works on the principle of photoelectric effect, and its response speed is usually at the millisecond level; if special treatment is carried out on the photocathode manufacturing process, the response speed can also reach microseconds , Nanosecond level. In order to study nanosecond response events with significant optical characteristics (such as explosion processes), it is necessary to record and image the occurrence process. When using photoelectric imaging to record and image analysis, on the one hand, photoelectric imaging devices are requ...

Claims

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Application Information

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IPC IPC(8): H01J29/04H01J1/34H01J9/12
Inventor 程宏昌石峰侯志鹏师宏立程耀进刘照路刘晖冯刘
Owner CHINA NORTH IND NO 205 RES INST
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