Quantum dot light emitting devices
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DAI NIPPON PRINTING CO LTD
- Publication Date
- 2009-05-06
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
[0001] References to related applications
[0002] This patent application enjoys the priority of Japanese application Japanese Patent Application No. 2007-256852 filed on March 28, 2007. The entire disclosure content of this prior application constitutes a part of this specification by reference. technical field
[0003] The present invention relates to a method for manufacturing an electroluminescence (hereinafter sometimes abbreviated as EL) element by patterning a light-emitting layer containing quantum dots using a layer whose wettability is changed by the action of a photocatalyst accompanying energy irradiation and the method. The produced EL element. Background technique
[0004] The EL element is a kind of element in which holes and electrons injected from two opposite electrodes are combined in the light-emitting layer, and the light-emitting material in the light-emitting layer is excited according to its energy, thereby emitting light corresponding to the color ...