Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element

A hybrid integrated circuit and molecular switch technology, applied in circuits, semiconductor devices, electrical solid state devices, etc., can solve problems that are not well solved, and achieve the effects of increased speed, simplified manufacturing process, and improved integration

Inactive Publication Date: 2009-05-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the upper and lower electrodes of molecular switching devices are not on the same plane, how to prepare these through holes and how to avoid the influence between the through holes and the upper and lower electrodes have not been well resolved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element
  • Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element
  • Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] The present invention provides a hybrid integrated circuit of a three-dimensional CMOS and a molecular switch device (CMOL). The electrodes are respectively connected with the upper and lower corresponding CMOS devices to form a three-dimensional structure.

[0029] Such as figure 2 as shown, figure 2 A schematic diagram of a hybrid integrated circuit structure of a three-dimensional CMOS and molecular switching device provided by the present invention; wherein, the upper and lower electrodes of the molecular switching device are respectively connected to the top and bottom CMOS devices, and then bonded to form a three-dimensional structure.

[0030] figure 2 The hybrid integrated circuit structure of the thr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of nanometer circuit structures in microelectronics and molectronics, which discloses a three-dimensional hybrid integrated circuit structure of a CMOS and a molecular switch device. The structure is formed by sequentially connecting a CMOS device as a top layer, a molecular switch device and a CMOS device as a bottom layer from the top to the bottom; the CMOS device at the top layer is connected with an electrode on the molecular switch device by a through hole, the CMOS device at the bottom layer is connected with an electrode below the molecular switch device by a through hole, and the CMOS device at the top layer and the CMOS device at the bottom layer are bonded together. The invention avoids the influence on the upper electrode and the lower electrode by the through holes which are not on the same surface. Meanwhile, the circuit integration is increased by once, and the invention has higher creative meaning and practical value.

Description

technical field [0001] The invention relates to the technical field of nanometer circuit structure in microelectronics and molecular electronics, in particular to a hybrid integrated circuit structure of three-dimensional CMOS and molecular switch devices. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, the traditional silicon-based integrated circuit technology is facing challenges, and the research on new materials and new structures has become a hot spot. Molecular electronic devices, one of the branches of nanoelectronics, are booming. [0003] Crossover molecular electronic devices based on bistable switching characteristics (Chen Y, Jung G Y, Ohlberg D AA et al. Nanotechnology, 2003, 14: 462) are currently one of the main structures of molecular electronic devices and have received extensive attention. A crossover molecular electronic device is a two-terminal device, as opposed to a conventional three-ter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L27/02H01L23/522
Inventor 涂德钰刘明王慰商立伟谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com