Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film

A technology for depositing gases and nitrides, which can be used in chemical instruments and methods, gaseous chemical plating, coatings, etc., and can solve problems such as troubles

Inactive Publication Date: 2009-05-20
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this process may suffer from relaxation of the plasma before it enters the processing region

Method used

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  • Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
  • Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
  • Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film

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Embodiment Construction

[0054] The present invention generally provides apparatus and methods for batch processing semiconductor substrates using components to aid in these processes by generating ions. In one embodiment of the present invention, a batch processing chamber having an excitation assembly disposed within the batch processing chamber enclosure is provided. An example of a batch processing chamber that can be used in an embodiment described herein is available as the FLEXSTAR system.

[0055] In general, excited species of process gases can be generated to aid in the ALD or CVD process as described herein. These species can be excited using plasma assist, UV assist (light assist), ion assist (eg, ions generated by an ion source), or combinations thereof. The species are excited within or adjacent to the processing region in the chamber enclosure to avoid recovery of the excited state before the ions reach the processing region of the batch processing chamber.

[0056] "Substrate" as u...

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Abstract

The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.

Description

technical field [0001] Embodiments of the invention generally provide a method of depositing materials, and more particularly, embodiments of the invention relate to the use of photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Chemical vapor deposition process and atomic layer deposition process. Background technique [0002] A substrate manufacturing process is usually evaluated by two related and important factors, namely, device yield and cost of ownership (COO). Cost of ownership, while influenced by many factors, is greatly affected by the number of substrates processed per process, ie, the throughput of the production process, and the cost of process materials. Batch processing has been found to be promising for attempts to increase capacity. However, providing uniform process conditions over an increasing number of substrates is a challenging issue. [0003] In addition to this, it has been shown that...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31C30B23/00
CPCH01J37/32009C23C16/45508C23C16/46C23C16/4583C23C16/45574C23C16/509C23C16/0209C23C16/0245C23C16/045C23C16/34C23C16/403C23C16/405C23C16/4405C23C16/45504C23C16/45591C23C16/482C23C16/4584H05H1/24
Inventor K·K·辛格M·马哈贾尼S·G·加那耶姆J·约德伏斯基B·麦克道尔
Owner APPLIED MATERIALS INC
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