Induction coupling plasma processing apparatus and method
A technology of plasma and inductive coupling, which is applied in plasma, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve the problems of high device cost, high power cost, and large power loss, and achieve high device cost , The effect of increasing the cost of electricity
Active Publication Date: 2009-05-27
TOKYO ELECTRON LTD
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Problems solved by technology
[0008] However, in the technology described in Patent Document 1, it is necessary to install two high-frequency power supplies, namely, a high-frequency power supply for the inner part of the helical antenna and a high-frequency power supply for the outer part, or to install a power distribution circuit, which increases the size of the device. Higher device costs
Moreover, in such a case, the power loss is large, the power cost becomes high, and it is difficult to perform high-precision plasma density distribution control
Further, in the actual etching process, there are cases where a plurality of different films are continuously etched in one etching process. In this case, the processing conditions are different depending on the film, so it is preferable to Antenna adjustment is performed, but there is no corresponding content in the technology described in the above-mentioned Patent Document 1
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[0074] Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention. figure 2 It is a plan view showing a high-frequency antenna used in this inductively coupled plasma processing apparatus. This apparatus is used, for example, for etching of metal films, ITO films, oxide films, etc., and ashing treatment of resist films when forming thin film transistors on a glass substrate for FPD. Here, as the FPD, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), etc. are exemplified.
[0075] This plasma processing apparatus has an airtight main body container 1 of a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 is assembled in a disassembleable manner, and is grounded through...
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The invention claims an inductively coupled plasma processing unit and a plasma processing method, where the inductively coupled plasma processing unit can control plasma state during a plasma processing period, free of increasing unit cost or electric power cost. An HF antenna (13) supplied HF electric power so as to form an induction filed in a processing chamber (4) is configured isolated from a dielectric wall (2) above the processing chamber (4). A light emitting state of the inductively coupled plasma formed in the processing chamber through the induction field is detected by means of a plasma light emitting state detection portion (40). According to the detection information of the plasma light emitting state detection portion (40), a control unit (50) controls a regulation unit (21) that regulates properties of antenna circuits including the HF antenna, to thereby control the plasma state.
Description
Technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus and a plasma processing method for performing plasma processing such as plasma etching on a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD). Background technique [0002] In the manufacturing process of a liquid crystal display device (LCD) or the like, in order to perform predetermined processing on a glass substrate, various plasma processing devices such as a plasma etching device and a plasma CVD film forming device are used. As such a plasma processing device, a capacitively coupled plasma processing device is often used in the prior art, but recently, inductively coupled plasma (Inductively Coupled Plasma: Inductively Coupled Plasma: ICP) processing devices are attracting attention. [0003] In the inductively coupled plasma processing apparatus, a high-frequency antenna is arranged outside ...
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Login to View More IPC IPC(8): C23C16/44C23C16/455H01L21/3065H01L21/205H01J37/32H05H1/46
CPCH01J37/321H01J37/32935
Inventor 佐藤亮齐藤均山本浩司
Owner TOKYO ELECTRON LTD