Method for manufacturing copper conductor with improvable quality

Abstract

The invention provides a copper conductor manufacturing method capable of improving quality, which is used for manufacturing a copper conductor on a silicon substrate. The prior art carries out a copper electrochemical plating process on an seed layer directly and part of the seed layer can not be plated with copper due to the poorer hydrophilic performance of the seed layer, so the manufactured copper conductor has notches and the quality of the copper conductor is seriously affected. The copper conductor manufacturing method capable of improving quality comprises the following steps: firstly, depositing a diffusion barrier layer on the silicon substrate; secondly, depositing a copper seed layer on the diffusion barrier layer; thirdly, generating a hydrophilic oxide layer on the seed layer; fourthly, generating a copper plating layer on the hydrophilic oxide layer through a copper electrochemical plating process; and finally, carrying out a chemical and mechanical polishing process on the copper plating layer to make the copper conductor. The method can avoid that part of the seed layer is not plated with copper to cause the notches on the copper conductor, and can greatly improve the quality of the copper conductor.

Description

technical field [0001] The invention relates to a metal wire manufacturing process, in particular to a copper wire manufacturing method capable of improving quality. Background technique [0002] With the continuous reduction of the minimum feature size (CD) of semiconductor devices (from the initial 1 mm to the current 90 nanometers or 60 nanometers, and will enter the era of 45 nanometers and 22 nanometers in the next few years), metal The current density in the wire is increasing and the response time is shortening. The traditional aluminum wire can no longer meet the needs of CD shrinking. Copper wire has gradually become the mainstream process in the semiconductor industry because of its lower resistivity and higher anti-electromigration ability than aluminum wire. The manufacturing method of the copper wire mainly includes the step of depositing a diffusion barrier layer, the step of depositing a copper seed layer, the step of electrochemical copper plating and the st...

AI Technical Summary

Problems solved by technology

[0003] However, gaps are prone to appear on the copper wire made by the above-mentioned manufacturing method, and these gaps will increase the resistance value of the copper wire, and in severe cases, it will cause the disconnection of the metal wire

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