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Method for growing high voltage and low voltage devices in E2PROM

A low-voltage device and high-voltage technology, applied in the field of large-scale integrated circuit design, can solve the problems of slow speed and incompatibility of low-voltage tubes, and achieve the effect of improving performance and reducing area

Inactive Publication Date: 2009-06-17
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing technology, regardless of the high-voltage area and the low-voltage area, the non-aligned silicide process is used to make the speed of the low-voltage tube slower, and it is not compatible with the existing low-voltage logic process.

Method used

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  • Method for growing high voltage and low voltage devices in E2PROM
  • Method for growing high voltage and low voltage devices in E2PROM

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Experimental program
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Embodiment Construction

[0013] Such as figure 2 As shown, the present invention is in E 2 The method for growing high-voltage and low-voltage devices in PROM includes the following steps: First, an isolation region and an active region are formed. In the second step, high-pressure and low-pressure well injection are performed. In the third step, the floating gate is deposited and etched. The fourth step is the growth and etching of the silicon oxide-silicon nitride-silicon oxide layer. In the fifth step, the high-voltage gate oxide layer is formed. In the sixth step, the high-pressure oxide layer in the low-pressure zone is removed. In the seventh step, a low-voltage gate oxide layer is formed. In the eighth step, the second layer of polysilicon, the control gate, is deposited. In the ninth step, the self-aligned double-layer polysilicon gate is etched so that the margin of the oxide layer in the high-voltage source and drain regions is below 300 angstroms and more than 100 angstroms, for example, 280 an...

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PUM

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Abstract

The invention discloses a method of shaping high voltage and low voltage devices in E2PROMs, which includes steps of utilizing the characteristic that double-layer gate high voltage devices and single-layer gate low voltage devices are adopted in the E2PROM, forming different oxide layer allowances during gate etching at a high voltage region and the low voltage region, then forming and etching a self-alignment silicide barrier layer, and forming self-alignment silicide, thereby realizing the process of adopting non-self-alignment silicide in high voltage devices and the process of adopting self-alignment silicide in low voltage devices, greatly reducing the area of high voltage devices and improving the performance of the high voltage devices.

Description

Technical field [0001] The invention relates to the design of large-scale integrated circuits in the field of semiconductor technology, in particular to a 2 The method of growing high-voltage and low-voltage devices in PROM. Background technique [0002] E 2 PROM is a commonly used memory, in E 2 There are both high-pressure areas and low-pressure areas in PROM. Charge pump circuits usually require some high-voltage devices. In addition to meeting certain leakage and withstand voltage, these high-voltage devices also hope that the smaller the size, the better. Usually, it is desirable to use non-self-aligned silicide process; for low-voltage devices, there are generally For speed and power consumption requirements, it is usually desirable to do a salicide process to reduce the series resistance, so as to achieve the speed and power consumption requirements. [0003] Existing technology in E 2 The method of growing high-voltage and low-voltage devices in PROM generally does not us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247
Inventor 张可钢
Owner SHANGHAI HUA HONG NEC ELECTRONICS