SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same

A plasma chamber and combined type technology, which is applied in the field of α-SiC-β-SiC combined reaction sintered SiC material and its preparation and two-body plasma chamber cathode using the material, which can solve the problem of increasing cathode manufacturing costs and increasing silicon carbide The content of impurities in the sintered body, it is difficult to apply to wafer engineering and other issues, to achieve the effect of improving the preparation effect

Inactive Publication Date: 2009-08-12
ワールドエクスインダストリーアンドトレイディングカンパニーリミテッド
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Problems solved by technology

However, when manufacturing the CVD-silicon carbide, a lot of expensive sintering aids are required, which not only increases the manufacturing cost of the cathode, but also inc

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  • SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same
  • SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same
  • SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same

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[0026] The present invention relates to a preparation method of SiC material widely used in semiconductor manufacturing engineering components under high temperature and high pressure environment in recent years and a two-body plasma chamber cathode using the SiC material, wherein the two-body plasma chamber cathode is A two-body plasma chamber cathode with a silicon-SiC structure, a flat or an angled outer funnel shape, and a drop. According to one aspect of the present invention, as a method for preparing a SiC sintered body material, a method for preparing an α-SiC-β-SiC combination type reaction sintered SiC material is provided, which specifically includes the following stages. The α-SiC powder is obtained by sintering under normal pressure or pressure, and the carbon powder is mixed with the α-SiC powder to obtain a carbon-α-SiC mixture; the carbon-α-SiC mixture is subjected to high-temperature pressurization, The stage of obtaining the carbon-α-type SiC molded body; und...

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Abstract

The present invention provides an alpha type SiC-beta SiC combination type reaction sintered SiC material, a preparing method and a two-body plasma cathode using the material, especially to an alpha type SiC-beta SiC combination type reaction sintered beta type SiC material used for semiconductor engineering components and a preparing method thereof, wherein the method comprises the following steps: obtaining the alpha type SiC powder through normal-pressure or pressure sintering, mixing the carbon powder with the alpha type SiC powder for obtaining carbon-alpha type SiC mixture, and after heating the carbon-alpha type SiC mixture for forming, reacting with the fused silicon in a vacuum high-temperature environment for obtaining the beta-type SiC material with the electric resistance which satisfies the electric characteristic. The invention also provides the two-body plasma cathode which has a silicon-SiC structure and a flat or a certain-degree profile funnel shape and has a drop height.

Description

technical field [0001] Recently, SiC material is used more and more widely as a component in semiconductor engineering. Among them, the present invention relates to a preparation method of SiC material with electrical properties, especially mixing carbon powder and α-type SiC powder Together to obtain a carbon-α-type SiC formed body, the molten silicon whose resistance has been adjusted is reacted with the carbon-α-type SiC formed body, and infiltrated into the formed body, so that the α-type SiC-β-type SiC combination type reaction The sintered SiC material has the characteristics of excellent mechanical properties, high purity, and high strength. At the same time, it also has the electrical properties necessary for semiconductor engineering, low manufacturing costs, and can speed up the sintering process. α-type SiC-β-type SiC silicon-bonded type Reaction sintered SiC material, its manufacturing method and plasma chamber cathode with flat or angled outer funnel shape and dro...

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Application Information

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IPC IPC(8): C04B35/565C04B35/622H01J37/32H01L21/00H05H1/24
CPCC04B2235/383C04B2235/661C04B2235/3834C04B35/573C04B2235/5436C04B2235/422
Inventor 郑在克许赞
Owner ワールドエクスインダストリーアンドトレイディングカンパニーリミテッド
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