Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus
A manufacturing method and a technology for manufacturing devices, which are applied in semiconductor/solid-state device manufacturing, photolithographic process coating equipment, electrical components, etc., can solve difficult positioning, difficulty in achieving high-precision pattern formation, and increased manufacturing costs of semiconductor devices, etc. question
Inactive Publication Date: 2009-08-19
TOKYO ELECTRON LTD
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Problems solved by technology
Therefore, there are problems in that the process becomes complicated, the manufacturing cost of the semiconductor device increases, and it is difficult to perform high-precision positioning in the second exposure process relative to the first exposure process, and it is difficult to achieve high-precision pattern formation.
Method used
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Embodiment Construction
[0035] Embodiments of the present invention will be described below with reference to the drawings.
[0036] figure 1 It is a schematic enlarged view showing a part of a substrate according to an embodiment of the present invention and showing steps of this embodiment, figure 2 It is a flowchart showing the process of this embodiment. Such as figure 1 As shown, a plurality of layers such as a first layer 102 , a second layer 103 , and a third layer 104 made of different materials are formed on a substrate 101 . At least one of these layers (third layer 104) is a layer to be etched.
[0037] First, if figure 1 As shown in (a), the first pattern forming step ( figure 2 step 201), that is, on the third layer 104, the first pattern 105 composed of a photoresist patterned into a predetermined pattern is formed through the steps of coating, exposure, and development. As the photoresist (first mask material) for forming the first pattern 105, in order to form a finer pattern,...
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Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first pattern 105 made of a photoresist; a process for forming a boundary layer 106 at sidewall portions and top portions of the first pattern 105; a process for forming a second mask material layer 107 to cover a surface of the boundary layer 106; a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106; a process for forming a second pattern made of the second mask material layer 107 by etching and removing the boundary layer 106; and a trimming process for reducing a width of the first pattern 105 and a width of the second pattern to predetermined widths.
Description
technical field [0001] The present invention relates to a patterning method for forming a mask used for etching such as plasma etching on a substrate such as a semiconductor wafer, a method for manufacturing a semiconductor device, and an apparatus for manufacturing the semiconductor device. Background technique [0002] Conventionally, in a manufacturing process of a semiconductor device or the like, an etching process such as plasma etching is performed on a substrate such as a semiconductor wafer to form a fine circuit pattern or the like. In such an etching process, a mask is formed by a photolithography process using a photoresist. [0003] In such a photolithography process, various techniques have been developed in order to cope with the miniaturization of the formed pattern. As one of them, there is a so-called double pattern exposure method. This double pattern exposure method is formed by carrying out the pattern formation of two stages of the following two steps...
Claims
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IPC IPC(8): H01L21/32H01L21/311H01L21/312H01L21/768H01L21/00G03F7/16
Inventor 八重樫英民志村悟
Owner TOKYO ELECTRON LTD