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Plasma processing apparatus and baffle plate of the plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of uneven distribution of free radicals and ions

Inactive Publication Date: 2009-08-26
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the inside of the processing container is evacuated in this state, a pressure gradient is generated above the substrate to be processed, and the distribution of radicals and ions becomes uneven.

Method used

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  • Plasma processing apparatus and baffle plate of the plasma processing apparatus
  • Plasma processing apparatus and baffle plate of the plasma processing apparatus
  • Plasma processing apparatus and baffle plate of the plasma processing apparatus

Examples

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Embodiment Construction

[0058] Hereinafter, a plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. figure 1 It is a schematic configuration diagram showing the whole of a plasma processing apparatus (etching apparatus).

[0059] exist figure 1 In , symbol 1 is a cylindrical chamber as a processing container. The end portion in the axial direction of the chamber 1 can close the inside so as to be airtight. On the side wall 1 a of the chamber 1 , there is provided a carry-in / out port (not shown) for carrying in and out a substrate to be processed. The loading and unloading port is opened and closed by a gate valve. The material of the chamber 1 is made of, for example, aluminum, stainless steel, or the like. Chamber 1 is grounded.

[0060] Inside the chamber 1, a susceptor 2 is provided as a mounting table on which a substrate to be processed such as a semiconductor wafer W is mounted. The base 2 is made of a conductiv...

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PUM

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Abstract

The invention provides a plasma processing apparatus capable of improving baffle plate flow conductance based on preventing plasma leakage. The plasma processing apparatus comprises: a processing container (1) for containing the processed substrate (W), a carrying bench (2) disposed in the processing container (1) for carrying the processed substrate (W), an inlet (17a) for introducing processing gas into the processing container (1), a high frequency power supply (13) for exciting the processing gas in the processing container (1) to generate plasma, a exhaust outlet (8) for discharging the processing gas in the processing container (1), and a baffle plate (7) having opening for passing the processing gas and capable of dividing the inner side do the processing container (1) into a plasma processing space (1b) and a exhaust space (1c). The opening of the baffle plate (7) is a slit (26) jointed by a plurality of slits. By joining a plurality of slits into one slit (26), the baffle plate flow conductance can be improved even the opening area is not changed.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing etching and film formation on substrates to be processed such as semiconductor devices and LCD (liquid crystal display) substrates, and to a baffle arranged in an exhaust path of the plasma processing apparatus . Background technique [0002] A plasma processing apparatus can be used in dry etching or the like typically used in a manufacturing process of a semiconductor device. The plasma processing device introduces gas into the processing container, and the gas is excited by high frequency and microwaves to generate plasma and generate free radicals and ions. Then, the radicals and ions generated by the plasma react with the substrate to be processed, and the reaction products are turned into volatile gases, which are exhausted to the outside through the vacuum exhaust system. [0003] An inlet for introducing a processing gas is provided on the upper portion of the proce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/3065H01L21/205
CPCH01J37/32623H01J37/32633H01J37/32449H01L21/205H01L21/3065
Inventor 佐藤彻治吉村章弘
Owner TOKYO ELECTRON LTD
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