Method and device for plasma-assisted chemical vapour deposition on the inner wall of a hollow body

A plasma, hollow technology, applied in gaseous chemical plating, electrical components, transportation and packaging, etc., can solve problems such as problems, unsuitable for wide application, limited hollow body geometry, etc., to achieve the effect of promoting the dissociation process
CN101522941BInactive Publication Date: 2011-09-28拉尔夫·斯坦
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
拉尔夫·斯坦
Publication Date
2011-09-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for plasma-assisted chemical vapour deposition for coating, or removing material from, the inner wall of a hollow body (42). A gas lance (44) is introduced into the hThe invention relates to a method for plasma-assisted chemical vapour deposition for coating, or removing material from, the inner wall of a hollow body (42). A gas lance (44) is introduced into the hollow body (42), and a cavity plasma (45) is formed by applying an electrical high-frequency field to a high-frequency electrode (41), forming a plasma cloud arranged on the tip of the gas lance.ollow body (42), and a cavity plasma (45) is formed by applying an electrical high-frequency field to a high-frequency electrode (41), forming a plasma cloud arranged on the tip of the gas lance.
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Description

【Technical field】

[0001] The invention relates to a method for plasma-assisted chemical vapor deposition for coating or removing material on the inner wall of a hollow body. 【Background technique】

[0002] This method is already known and is known in technical terms as plasma deposition (PECVD, "plasma enhanced chemical vapor deposition") or ion etching, plasma etching.

[0003] Based on this, the workpiece is placed in a vacuum chamber and held there. The chamber is evacuated until the pressure of the residual gas is in the high vacuum or ultra-high vacuum region, and injected with inert working gas. Next, the low-pressure plasma is introduced into the RF field through the RF electrodes arranged in the vacuum chamber, so that the low-pressure plasma is ignited. In this case, an ionized gas is introduced which contains a considerable proportion of fast-moving free charge carriers, for example ions or electrons.

[0004] In PECVD, a gas called a reactant gas is fed into th...

Claims

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