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Power switching semiconductor devices including rectifying junction-shunts

A technology of semiconductors and shunts, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2009-09-16
CREE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] However, under reverse bias conditions, the depletion region formed by the PN junction J2 between the p+ region 56 and the drift layer 54 expands to block the reverse current flow through the device 50, thus protecting the Schottky junction J3 and limiting Reverse leakage current in device 50

Method used

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Embodiment Construction

[0068] The invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may however be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout the drawings.

[0069]As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It is to be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, materials, layers and / or sections, these elements, components, regions, layers and / or Parts should n...

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Abstract

A semiconductor device includes a drift layer having a first conductivity type and a body region adjacent the drift layer. The body region has a second conductivity type opposite the first conductivity type and forms a p-n junction with the drift layer. The device further includes a contactor region in the body region and having the first conductivity type, and a shunt channel region extending through the body region from the contactor region to the drift layer. The shunt channel region has the first conductivity type. The device further includes a first terminal in electrical contact with the body region and the contactor region, and a second terminal in electrical contact with the drift layer.

Description

[0001] Statement of Government Interest [0002] This invention was made at least in part with support from the United States Office of Naval Research under Contract No. 05-C-0202. The government has certain rights in this invention. technical field [0003] The present invention relates to power semiconductor devices and methods of forming power semiconductor devices, and more particularly to power switching semiconductor devices and methods of forming power switching semiconductor devices. Background technique [0004] Power semiconductor devices are widely used to carry large currents and support high voltages. One widely used power device is the power metal oxide semiconductor field effect transistor (MOSFET). In a power MOSFET, the control signal is provided to the gate electrode, which is separated from the semiconductor surface by an intervening insulator, which may be, but is not limited to, silicon dioxide. Current conduction occurs via the transport of majority ...

Claims

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Application Information

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IPC IPC(8): H01L29/76
CPCH01L29/41766H01L29/0878H01L29/6606H01L29/66068H01L29/7802H01L29/0847H01L29/861H01L21/0465H01L29/1095H01L29/7828H01L29/1608H01L29/7803H01L29/70
Inventor A·赫夫纳柳世衡A·阿加瓦尔
Owner CREE INC
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